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Partno	Mfg	Dc	Qty	Available	Descript
BAS16VY	PHI	N/a	750	avai	Triple high-speed switching diodes

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BAS16VY
Triple high-speed switching diodes
Product profile1.1 General description
Three electrically isolated high-speed switching diodes, encapsulated in very small SMD
plastic packages.
1.2 Features Very small SMD plastic packages High-speed switching Three electrically isolated diodes Low capacitance.
1.3 Applications General purpose switching in surface mounted circuits.
1.4 Quick reference data
BAS16VV; BAS16VY
Triple high-speed switching diodes
Table 1: Product overview
BAS16VV SOT666 - triple isolated diode
BAS16VY SOT363 SC-88 triple isolated diode
Table 2: Quick reference data reverse voltage - - 100 V
IFRM repetitive peak forward current - - 450 mA
trr reverse recovery time - - 4 ns
Philips Semiconductors BAS16VV; BAS16VY Pinning information Ordering information Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China Limiting values
Table 3: Discrete pinning anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1) 001aab555 sym043
Table 4: Ordering information
BAS16VV - plastic surface mounted package; 6 leads SOT666
BAS16VY SC-88 plastic surface mounted package; 6 leads SOT363
Table 5: Marking
BAS16VV 53
BAS16VY 16*
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode
VRRM repetitive peak reverse
voltage 100 V reverse voltage - 100 V forward current - 200 mA
IFRM repetitive peak forward
current 450 mA
Philips Semiconductors BAS16VV; BAS16VY
[1] Tj = 25 °C prior to surge; see Figure2.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[3] Single diode loaded.
[4] Solder points at pins 2, 3, 5 and 6. Thermal characteristics
[1] Refer to SOT666 standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting
pad.
[4] Solder points at pins 2, 3, 5 and 6.
IFSM non-repetitive peak forward
current
square wave [1]-
tp = 1μs - 4.5 A
tp = 1 ms - 1 A
tp = 1 s - 0.5 A
Ptot total power dissipation
SOT666 Tamb ≤ 25°C [2][3]- 180 mW
SOT363 Tsp = 85°C [4]- 250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6: Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7: Thermal characteristics
Rth(j-a) thermal resistance from junction
to ambient
in free air
SOT666 [1][2]- - 700 K/W
[2][3]- - 410 K/W
Rth(j-s) thermal resistance from junction
to soldering point
SOT363 [4]- - 260 K/W
Philips Semiconductors BAS16VV; BAS16VY Characteristics
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Per diode forward voltage see Figure1
IF = 1 mA - - 715 mV
IF = 10 mA - - 855 mV
IF = 50 mA - - 1 V
IF = 150 mA - - 1.25 V reverse current see Figure3
VR = 25 V - - 30 nA
VR = 75 V - - 1 μA
VR = 25 V; Tj = 150°C --30 μA
VR = 75 V; Tj = 150°C --50 μA diode
capacitance
VR = 0 V; f = 1 MHz;
see Figure4 - 1.5 pF
trr reverse recovery
time
see Figure5 [1] --4 ns
Vfr forward recovery
voltage
see Figure6 [2]- - 1.75 V
Philips Semiconductors BAS16VV; BAS16VY
Philips Semiconductors BAS16VV; BAS16VY Test information

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