BAS16T ,Switching DiodesFeaturesn High switching speed: t ≤4ns n Low capacitancerrn Low leakage current n Reverse voltage: ..
BAS16T ,Switching DiodesELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitForw ..
BAS16T ,Switching Diodes
BAS16TT1 ,Silicon Switching DiodeTHERMAL CHARACTERISTICS3CASE 463Characteristic Symbol Max UnitSOT−4162STYLE 2Total Device Dissipati ..
BAS16TW , Fast Switching Speed, Ultra-Small Surface Mount Package
BAS16TW , Fast Switching Speed, Ultra-Small Surface Mount Package
BCR148FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR148S ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR148T ,Digital TransistorsBCR148...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit driver ci ..
BCR148W ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR151T E6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR151TE6327 ,Digital TransistorsBCR151...PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BAS16T
Switching Diodes
