BAS16HT1G ,Small Signal Diodeapplications involving pulsed or low duty cycle operations.Thermal CharacteristicsSymbol Parameter ..
BAS16J ,High-speed switching diodesFeaturesn High switching speed: t ≤4ns n Low capacitancerrn Low leakage current n Reverse voltage: ..
BAS16L ,High-speed diodeGeneral descriptionHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)p ..
BAS16LT1 ,CASE 31808, STYLE 8 SOT23 (TO236AB)THERMAL CHARACTERISTICS1Characteristic Symbol Max UnitA6 D2Total Device Dissipation FR−5 Board PD S ..
BAS16PT , SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere
BAS16T ,Switching DiodesFeaturesn High switching speed: t ≤4ns n Low capacitancerrn Low leakage current n Reverse voltage: ..
BCR141E6327 , NPN Silicon Digital Transistor
BCR141F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR141.../SEMH1NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, dr ..
BCR141FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR141S ,NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface, driver circuit)BCR141...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR141T ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR141W ,NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)BCR141...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BAS16HT1G
Small Signal Diode
BAS16HT1G BAS16HT1G Connection Diagram 2 2 A1 1 SOD-323 1 Small Signal Diode Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 85 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 600 mA T Storage Temperature Range -65 to +150 °C STG T Operating Junction Temperature -55 to +150 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 200 mW D R Thermal Resistance, Junction to Ambient 600 °C/W θJA Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units V Breakdown Voltage I = 5.0μA85 V R R V Forward Voltage I = 1.0mA 715 mV F F I = 10mA 855 mV F I = 50mA 1.0 V F I = 150mA 1.25 V F I Reverse Leakage V = 75V 1.0 μA R R V = 25V, T = 150°C 30 μA R A V = 75V, T = 150°C 50 μA R A C Total Capacitance V = 0, f = 1.0MHz 2.0 pF T R t Reverse Recovery Time I = I = 10mA, I = 1.0mA, 6.0 ns rr F R RR R = 100Ω L ©2004 BAS16HT1G, Rev. A
