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BAS140INFINEONN/a34000avaiSilicon Schottky Diode


BAS140 ,Silicon Schottky Diode BAS40.../BAS140WSilicon Schottky Diode• General-purpose diode for high-speed switching• Circuit pr ..
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BAS16-02L ,Latest Silicon DiscretesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
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BAS140
Silicon Schottky Diode
BAS40.../BAS140W
Silicon Schottky Diode

• General-purpose diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
BAS140W
BAS40-02L
BAS40-06
BAS40-06W
BAS40BAS40-05
BAS40-05W
BAS40-04
BAS40-07
BAS40-07W
ESD: Electrostatic discharge sensitive device, observe handling precaution!

*Preliminary
BAS40.../BAS140W
Maximum Ratings at T
A = 25°C, unless otherwise specified
Thermal Resistance

1For calculation of RthJA please refer to Application Note Thermal Resistance
BAS40.../BAS140W
DC Characteristics
AC Characteristics

1∆VF is the difference between lowest and highest VF in a multiple diode component.
BAS40.../BAS140W
Diode capacitance C

f = 1MHz0R20V30
EHB0004110mA1003
Reverse current I
R = ƒ(VR)A = Parameter 010101010-1
Forward current I
F = ƒ (VF) = Parameter
EHB0003810
BAS40.../BAS140W
Forward current I
F = ƒ (TS)
BAS140W
20
40
60
80
100
140
Forward current I
F = ƒ (TS)
BAS40, BAS40-07
20
40
60
80
100
140
Forward current I
F = ƒ (TS)
BAS40-02L
20
40
60
80
100
140
Forward current I
F = ƒ (TS)
BAS40-04, BAS40-06
20
40
60
80
100
140
BAS40.../BAS140W
Forward current I
F = ƒ (TS)
BAS40-06W
20
40
60
80
100
140
Forward current I
F = ƒ (TS)
BAS40-05
20
40
60
80
100
140
Forward current I
F = ƒ (TS)
BAS40-05W
20
40
60
80
100
140
Forward current I
F = ƒ (TS)
BAS40-07W
20
40
60
80
100
140
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