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Partno	Mfg	Dc	Qty	Available	Descript
BAS125-04W \|BAS12504W	infineon	N/a	18000	avai	RF Schottky Diode
BAS125W	Infineon	N/a	72000	avai	Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)

BAS125W ,Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)characteristicsReverse current I nARV = 20 V - - 100RV = 25 V - - 150RForward voltage V mVFI = ..
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BAS125-04W-BAS125W
RF Schottky Diode
BAS 125W
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
BAS 125-05WBAS 125-06WBAS 125WBAS 125-04W
EHA07004
EHA0700613
EHA07002
Maximum Ratings
Thermal Resistance
BAS 125W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
BAS 125W
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
BAS 125W
10
20
30
40
50
60
70
80
100
Permissible Pulse Load RthJS = f (tp)
BAS 125W
10 0 10 10 10 10
thJS
Permissible Pulse Load Fmax / IFDC = f (tp)
BAS 125W0 10 10 10
IFmax
FDC
BAS 125W
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
BAS 125-04W ... (IF per diode)
10
20
30
40
50
60
70
80
100
Permissible Pulse Load RthJS = f (tp)
BAS 125-04W ...
10 0 10 10 10 10
thJS
Permissible Pulse LoadFmax / IFDC = f (tp)
BAS 125-04W ...0 10 10 10
IFmax
FDC
BAS 125W
Diode capacitance C
f = 1MHz0.0
EHD07117VV20
Forward current IA = Parameter
0.010FV1010102
1.00.5V
Differential forward resistance rf = f (IF)
f = 10 kHz
EHD0711810
Reverse current IR = f (VR)A = Parameter10R101010110V
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