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Partno	Mfg	Dc	Qty	Available	Descript
BAS101S	NXP/PHILIPS	N/a	3000	avai	High-voltage switching diodes

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BAS101S
High-voltage switching diodes
Product profile1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1] When switched from IF=30 mA to IR =30mA; RL= 100 Ω; measured at IR =3mA.
BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009 Product data sheet
Table 1. Product overview
BAS101 SOT23 - single
BAS101S SOT23 - dual series High switching speed: trr≤50ns Low capacitance: Cd≤ 2pF Low leakage current Reverse voltage: VR≤ 300V Repetitive peak reverse voltage:
VRRM≤ 300V Small SMD plastic package High-speed switching Voltage clamping High-voltage switching Reverse polarity protection
Table 2. Quick reference data
Per diode forward current - - 200 mA reverse current VR= 250V - - 150 nA reverse voltage - - 300 V
trr reverse recovery time [1] --50 ns
NXP Semiconductors BAS101; BAS101S
High-voltage switching diodes Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
BAS101 anode not connected cathode
BAS101S anode (diode1) cathode (diode2) cathode (diode 1),
anode (diode2)
Table 4. Ordering information
BAS101 - plastic surface-mounted package; 3 leads SOT23
BAS101S
Table 5. Marking codes
BAS101 *HQ
BAS101S *HR
NXP Semiconductors BAS101; BAS101S
High-voltage switching diodes Limiting values
[1] Tj =25 °C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode
VRRM repetitive peak reverse
voltage
-300 V
series connection - 600 V reverse voltage - 300 V
series connection - 600 V forward current - 200 mA
series connection - 100 mA
IFRM repetitive peak forward
current≤1 ms; δ≤ 0.25 A
IFSM non-repetitive peak forward
current
square wave; ≤1μs
[1] -9 A
Per device
Ptot total power dissipation Tamb≤25°C [2] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 500 K/W
NXP Semiconductors BAS101; BAS101S
High-voltage switching diodes Characteristics
[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
[2] When switched from IF=30 mA to IR =30mA; RL= 100 Ω; measured at IR =3mA.
Table 8. Characteristics
Tamb =25 °C unless otherwise specified.
Per diode forward voltage IF =100 mA [1] -- 1.1 V reverse current VR= 250V - - 150 nA =250 V; Tj =150°C - - 100 μA diode capacitance VR =0V; f=1MHz - - 2 pF
trr reverse recovery time [2]- - 50 ns
NXP Semiconductors BAS101; BAS101S
High-voltage switching diodes
NXP Semiconductors BAS101; BAS101S
High-voltage switching diodes Test information Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section15.
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
BAS101 SOT23 4 mm pitch, 8 mm tape and reel -215 -235
BAS101S

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