BAR90-02L ,Diodes for switching applications up to 3GHzapplications• Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 ..
BAS101S ,High-voltage switching diodesApplications High-speed switching Voltage clamping High-voltage switching Reverse polarity pro ..
BAS11 ,Controlled avalanche rectifiers
BAS116LT1 ,Switching DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BAS116T-7-F , SURFACE MOUNT LOW LEAKAGE DIODE
BAS125-04W ,RF Schottky Diodeapplications• Integrated diffused guard ring• Low forward voltage21VSO05561BAS 125W BAS 125-04W BAS ..
BCR108W E6327 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR10CM , MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR10CM , MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR10CM-12 , Triac 10 Amperes/400-600 Volts
BCR10CM-12L , Triac 10 Amperes/400-600 Volts
BCR10PM , MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BAR90-02L
Diodes for switching applications up to 3GHz
BAR90...
Silicon Deep Trench PIN Diodes• Optimized for low bias current antenna switches
in hand held applications
• Very low capacitance at zero volt reverse bias
at frequencies above 1GHz (typ. 0.19pF)
• Low forward resistance (typ. 1.3Ω @ IF = 3mA)
• Improved ON / OFF mode harmonic
distortion balance
BAR90-02L
BAR90-02LRH
BAR90-07L4
BAR90-07LRH
BAR90-099L4
BAR90-099LRH
BAR90-098L4
BAR90-098LRH* Preliminary data
Maximum Ratings at TA = 25°C, unless otherwise specified
BAR90...
Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BAR90...
AC Characteristics1BAR90-02L in series configuration, Z = 50 Ω
BAR90...
Diode capacitance CT = ƒ (VR)
f = Parameter
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.5
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
-1 10 10 10 10 10 10
Forward resistance rf = ƒ (IF)
f = 100 MHz2
-1 10 10 10
Forward current IF = ƒ (VF)A = Parameter
-6 10
-5 10
-4 10
-3 10
-2 10
-1 10
BAR90...
Forward current IF = ƒ (TS)
10
20
30
40
50
60
70
80
90
100
120
Permissible Puls Load RthJS = ƒ (tp)
10 1
-1 10 10 10 10
thJS
Permissible Pulse LoadFmax/ IFDC = ƒ (tp)0 10 10 10
Fmax
FDC
Insertion loss |S21|2 = ƒ(f)F = Parameter
BAR90-02L in series configuration, Z = 50Ω
-0.4
-0.35
-0.3
-0.25
-0.2
-0.15
-0.1
Ins
ion Los
BAR90...
Isolation |S21|2 = ƒ(f)R = Parameter
BAR90-02L in series configuration, Z = 50Ω
-30
-25
-20
-15
-10
ati
