BAR80 ,Silicon RF Switching DiodeCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BAR88-02L ,PIN Diodesapplications• Very low forward resistance (typ. 1.5 Ω @ I = 1 mA)F• Low capacitance at zero volt ..
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BAR89 ,Silicon PIN Diodeapplications
BAR80
Silicon RF Switching Diode
BAR80
Silicon RF Switching Diode Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
Maximum Ratings
BAR80
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
Application information
Configuration of the shunt-diode- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
BAR80
Forward current IF = f (TS)
20
40
60
80
100
120
160
Permissible Pulse Load RthJS = f(tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load Fmax / IFDC = f(tp) 0 10 10 10
Fmax
FDC
BAR80
Forward resistance rf = 100MHzfΙ010110210mA1010
Diode capacitance Cf = 1MHz0.0
EHD07009V20V30
0.4
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Datasheets for electronic components.
