BAR63V-06 ,RF PIN DiodesRev. 1.3, 26-Apr-04 3I -ForwardCurrent(mA)Fmax 0.1 (.004)1.43 (.056)1.33 (.052)0.175 (.007)0.125 (. ..
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BAR63V-06
RF PIN Diodes
BAR63V-06Document Number 85753
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RF PIN Diodes - Dual, Common Anode in SOT-23
DescriptionCharacterized by a very low reverse Capacitance the
PIN Diode BAR63V-06 was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
Features Low forward resistance Very small reverse capacitance
ApplicationsFor frequency up to 3 GHz
RF-signal tuning
Mobile , wireless and TV-Applications
Parts Table
Absolute Maximum Ratingsamb = 25 °C, unless otherwise specified
Electrical CharacteristicsTamb = 25 °C, unless otherwise specified