BAR63V-04W ,RF PIN DiodesRev. 1.2, 26-Apr-04 3I -ForwardCurrent(mA)F1.25 (0.049)0.15 (0.006) min.2.0 (0.078)BAR63V-04WVISHAY ..
BAR63V-05 ,RF PIN DiodesRev. 1.2, 26-Apr-04 3I -ForwardCurrent(mA)Fmax 0.1 (.004)1.43 (.056)1.33 (.052)0.175 (.007)0.125 (. ..
BAR63V-06 ,RF PIN DiodesRev. 1.3, 26-Apr-04 3I -ForwardCurrent(mA)Fmax 0.1 (.004)1.43 (.056)1.33 (.052)0.175 (.007)0.125 (. ..
BAR63V-06W-GS08 , RF PIN Diodes - Dual, Common Anode in SOT-323
BAR64 ,Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)BAR64...Silicon PIN Diode
BAR63V-04W
RF PIN Diodes
BAR63V-04WDocument Number 85698
www.vishay.com
RF PIN Diodes - Dual, Series in SOT-323
DescriptionCharacterized by a very low reverse Capacitance the
PIN Diode BAR63V-04W was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diodes are
wireless, mobile and TV-systems.
Features Low forward resistance Very small reverse capacitance
ApplicationsFor frequency up to 3 GHz
RF-signal tuning
Mobile , wireless and TV-Applications
Parts Table
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
Electrical CharacteristicsTamb = 25 °C, unless otherwise specified
