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BAR63-02W-BAR63-04-BAR63-04W-BAR63-05-BAR63-05W Fast Delivery,Good Price
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Partno	Mfg	Dc	Qty	Available	Descript
BAR63-02W |BAR6302W	INFINEON	N/a	141000	avai	PIN Diodes
BAR63-04W |BAR6304W	INFINEON	N/a	13000	avai	PIN Diodes
BAR63-04 |BAR6304	INFINEON	N/a	12060	avai	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05 |BAR6305	INFINEON	N/a	1770	avai	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05W |BAR6305W	INFINEON	N/a	3000	avai	Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06 |BAR6306	INFINEON	N/a	126000	avai	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06W |BAR6306W	SIEMENS	N/a	3000	avai	Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-06W |BAR6306W	INFINEON	N/a	3000	avai	Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

BAR63-02W ,PIN DiodesBAR63...Silicon PIN Diodes

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BAR63-02W-BAR63-04-BAR63-04W-BAR63-05-BAR63-05W-BAR63-06-BAR63-06W
PIN Diodes
BAR63...
Silicon PIN Diodes PIN diode for high speed
switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz
BAR63-02..
BAR63-03W
BAR63-07L4BAR63-04
BAR63-04W
BAR63-06
BAR63-06W
BAR63-05
BAR63-05W
* preliminary data
BAR63...
Maximum Ratings at TA = 25°C, unless otherwise specified
Thermal Resistance
1For calculation of RthJA please refer to the Technical Information
BAR63...
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BAR63...
AC Characteristics
1BAR63-02L in series configuration, Z = 50
BAR63...
Diode capacitance C
f = 1MHz - 1.8GHzC0V
Reverse parallel resistance RP = (VR)
f = Parameter
-1 10 10 10 10 10
Forward resistance rf = (IF)
f = 100MHzrΩ-210-1012201
Forward current IF = (VF) = Parameter
EHD07171-3
0.50.81V1.2˚C
BAR63...
Forward current IF = (TS)
BAR63-04...BAR63-06
20
40
60
80
120
Forward current IF = (TS)
BAR63-02V, BAR63-02W
20
40
60
80
120
Forward current IF = (TS)
BAR63-03W
20
40
60
80
120
Forward current IF = (TS)
BAR63-04W...BAR63-06W
20
40
60
80
120

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