BAR43S ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43S ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43S ,Schottky DiodesBAR 42BAR 43, A, C, SSMALL SIGNAL SCHOTTKY DIODESK AK1N.C.A K2BAR42/BAR43 BAR43AA1KK2A1 K1DESCRIPT ..
BAR43S ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43SFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR46 ,SMALL SIGNAL SCHOTTKY DIODESFEATURES AND BENEFITSVERY SMALL CONDUCTION LOSSESNEGLIGIBLE SWITCHING LOSSESLOW FORWARD VOLTAGE DRO ..
BCP55 ,SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCP55-10 ,NPN medium power transistorsGeneral descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP55-16 ,NPN Silicon AF Transistors (For AF driver and output stages High collector current)LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCP56 ,MEDIUM POWER AMPLIFIERSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitCollector-Emitter Voltage ..
BCP56-10 ,General Purpose TransistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCP56-10T1 ,NPN Silicon Epitaxial TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BAR43S
Schottky Diodes
BAR43/A/C/S BAR43/A/C/S Connection Diagrams 3 3 3 BAR43A BAR43 3 D95 1 2NC 1 2 2 1 2 3 3 BAR43C BAR43S 1 MARKING BAR43 D95 BAR43A DB1 SOT-23 11 2 2 BAR43C DB2 BAR43S DA5 Schottky Diodes Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 30 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 750 mA Storage Temperature Range -55 to +150 T °C stg Operating Junction Temperature 150 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Mounted on ceramic substrate 10mm x 8mm x 0.6mm. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 290 mW D Thermal Resistance, Junction to Ambient 430 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage V 30 R I = 100 μA R V Forward Voltage I = 2.0 mA 260 330 mV F F I = 15 mA 450 mV F I = 100 mA 1.0 V F I Reverse Current V = 25 V 0.5 μA R R V = 25 V, T = 100 C 100 ° μA R A Reverse Recovery Time I = I = 10 mA, I = 1.0 mA, 5.0 ns t F R RR rr R = 100 Ω L Minimum Detection Recovery Time I = I = 10 mA, I = 1.0 mA, 80% F R RR R = 100 Ω L BAR43, Rev. B 2001
