BAR43A-BAR43S Fast Delivery |IC PHOENIX CO.,LIMITED

BAR43A ,Schottky DiodesBAR 42BAR 43, A, C, SSMALL SIGNAL SCHOTTKY DIODESK AK1N.C.A K2BAR42/BAR43 BAR43AA1KK2A1 K1DESCRIPT ..
BAR43AFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43C ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43CFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43CFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43FILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKING DIAGRAMRating Symbol Value Unit4Collector ..
BCP54 ,45 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCP54-10 ,NPN Silicon AF Transistors (For AF driver and output stages High collector current)CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BCP54C B60 - ..
BCP5416 ,General Purpose TransistorsBCP54...BCP56NPN Silicon AF Transistors

BAR43A-BAR43S
Schottky Diodes
BAR 42
BAR 43, A, C, S
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose metalto silicon diodes featuring
very low turn-on voltage and fast switching.
June 1999- Ed:2A
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V Continuous forward current 100 mA
IFSM Surge non repetitive forward current tp=10ms sinusoidal 750 mA
Ptot Power dissipation (note1) Tamb =25°C 250 mW
Tstg Maximum storage temperaturerange -65to +150 °C Maximum operating junction temperature* 150 °C Maximum temperaturefor soldering during 10s 260 °C
Note1:for double diodes,Ptotisthe totalpower dissipationof both diodes.
ABSOLUTE RATINGS (limiting values)
SOT-23
(Plastic)
N.C.
BAR42/BAR43 BAR43A
BAR43C BAR43S dPtot
dTj < 1
Rth(j−a) thermal runaway conditionfora diodeonits own heatsink
Symbol Test conditions Value Unit
Rth(j-a) Junction-ambient* 500 °C/W Mountedon epoxy board with recommended padlayout.
THERMAL RESISTANCE
1/4
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj= 25°CIR= 100μA 30 V* Tj= 25°C BAR42 IF=10 mA 0.35 0.4 V=50 mA 0.5 0.65
BAR43 IF=2 mA 0.26 0.33=15 mA 0.45
All IF= 100 mA 1** Tj= 25°C VR= 25V 500 nA= 100°C 100 μA
Pulse test: *tp= 380μs,δ <2%tp=5 ms,δ <2%
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit Tj= 25°CVR=1V F= 1MHz 7pF
trr Tj= 25°CIF =10 mA IR =10 mA
Irr= 1mA RL= 100Ω
5ns
η*Tj= 25°CRL =50 KΩ CL= 300pF= 45Mhz Vi= 2V for BAR43 % Detectionefficiency.
DYNAMIC CHARACTERISTICS
0.00 0.05 0.10 0.150.20 0.25 0.30 0.35 0.40 0.45 0.50
0.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
VFM(V)
IFM(A)
Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1E-3
1E-2
1E-1
5E-1
VFM(V)
IFM(A)
Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
BAR 42/BAR 43,A,C,S
2/4
5 10 15 20 25 301E-2
1E-1
1E+0
1E+1
1E+2
VR(V)
IR(μA)
Tj=50°C
Tj=25°C
Tj=100°C
Fig.2: Reverse leakage current versus reverse
voltage applied (typicalvalues). 25 50 75 100 125 150
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
Tj(°C)
IR(μA)
VR=30V
Fig.3: Reverse leakage current versus junction
temperature. 5 10 20 30
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
tp(s)
Zth(j-a)/Rth(j-a)
δ=tp/T tp
Singlepulse0.1
δ=0.20.5
Fig.5: Relative variationof thermal impedance
junctionto ambient versus pulse duration (epoxy
FR4 with recommendedpad layout, e(Cu)=35μm). 5 10 15 20 25 30 35 40 45 50
S(Cu) (mm )
Rth(j-a) (°C/W)
P=0.25W
Fig.6: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printedcircuitboardFR4,copperthickness:35μm).
BAR 42/BAR 43,A,C,S
3/4
PACKAGE MECHANICAL DATA
SOT23 (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026
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FOOT PRINT DIMENSIONS
inch
Ordering type Marking Package Weight Base qty Delivery mode
BAR42 D94 SOT-23 0.01g 3000 Tape& reel
BAR43 D95 SOT-23 0.01g 3000 Tape& reel
BAR43S DB1 SOT-23 0.01g 3000 Tape& reel
BAR43C DB2 SOT-23 0.01g 3000 Tape& reel
BAR43S DA5 SOT-23 0.01g 3000 Tape& reel
Epoxymeets UL94,V0
BAR 42/BAR 43,A,C,S
4/4
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Datasheets for electronic components.

Partno	Mfg	Dc	Qty	Available	Descript
BAR43A	ST	N/a	12000	avai	Schottky Diodes
BAR43S	ST	N/a	2840	avai	Schottky Diodes