BAR43 ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43A ,Schottky DiodesBAR 42BAR 43, A, C, SSMALL SIGNAL SCHOTTKY DIODESK AK1N.C.A K2BAR42/BAR43 BAR43AA1KK2A1 K1DESCRIPT ..
BAR43AFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43C ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43CFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43CFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BCP53-16T1 ,PNP Silicon Epitaxial Transistors• High Current: 1.5 Amps• NPN Complement is BCP56MEDIUM POWER• The SOT-223 Package can be soldered ..
BCP53-16T1G , PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKING DIAGRAMRating Symbol Value Unit4Collector ..
BCP54 ,45 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCP54-10 ,NPN Silicon AF Transistors (For AF driver and output stages High collector current)CharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 45 - -BCP54C B60 - ..
BAR43
Schottky Diodes
BAR43/A/C/S BAR43/A/C/S Connection Diagrams 3 3 3 BAR43A BAR43 3 D95 1 2NC 1 2 2 1 2 3 3 BAR43C BAR43S 1 MARKING BAR43 D95 BAR43A DB1 SOT-23 11 2 2 BAR43C DB2 BAR43S DA5 Schottky Diodes Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 30 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 750 mA Storage Temperature Range -55 to +150 T °C stg Operating Junction Temperature 150 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Mounted on ceramic substrate 10mm x 8mm x 0.6mm. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 290 mW D Thermal Resistance, Junction to Ambient 430 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage V 30 R I = 100 μA R V Forward Voltage I = 2.0 mA 260 330 mV F F I = 15 mA 450 mV F I = 100 mA 1.0 V F I Reverse Current V = 25 V 0.5 μA R R V = 25 V, T = 100 C 100 ° μA R A Reverse Recovery Time I = I = 10 mA, I = 1.0 mA, 5.0 ns t F R RR rr R = 100 Ω L Minimum Detection Recovery Time I = I = 10 mA, I = 1.0 mA, 80% F R RR R = 100 Ω L BAR43, Rev. B 2001
