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Partno	Mfg	Dc	Qty	Available	Descript
BAR42	ST	N/a	100000	avai	SMALL SIGNAL SCHOTTKY DIODES

BAR42 ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR42FILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43 ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BAR43A ,Schottky DiodesBAR 42BAR 43, A, C, SSMALL SIGNAL SCHOTTKY DIODESK AK1N.C.A K2BAR42/BAR43 BAR43AA1KK2A1 K1DESCRIPT ..
BAR43AFILM ,SMALL SIGNAL SCHOTTKY DIODESBAR42FILMBAR43/A/C/SFILM®SMALL SIGNAL SCHOTTKY DIODESKAK1N.C.K2ABAR42FILMBAR43AFILMBAR43FILMA1K2KK1 ..
BAR43C ,Schottky DiodesBAR43/A/C/SBAR43/A/C/SConnection Diagrams3 33BAR43ABAR433D951 2NC 1 2212 3 3BAR43C BAR43S1MARKINGBA ..
BCP53-16 ,PNP Silicon AF Transistors (For AF driver and output stages High collector current)General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP53-16T1 ,PNP Silicon Epitaxial Transistors• High Current: 1.5 Amps• NPN Complement is BCP56MEDIUM POWER• The SOT-223 Package can be soldered ..
BCP53-16T1G , PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKING DIAGRAMRating Symbol Value Unit4Collector ..
BCP54 ,45 V, 1 A NPN medium power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..

BAR42
SMALL SIGNAL SCHOTTKY DIODES
BAR42FILM
BAR43/A/C/SFILM
SMALL SIGNAL SCHOTTKY DIODES
Note 1: for double diodes, Ptot is the total power dissipation of both diodes.
ABSOLUTE RATINGS (limiting values)
* : dPtot
dTj Rthj a< − thermal runaway condition for a diode on its own heatsink
* Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
General purpose metalto silicon diodes featuring
very low turn-on voltage and fast switching.
DESCRIPTION
BAR42FILM BAR43/A/C/SFILM
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
0.00 0.050.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
IFM(A)
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level). 0.1
5E-1
IFM(A)
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
Pulse test:*tp= 380μs,δ < 2%tp=5 ms,δ <2%
* Detection effeciency
BAR42FILM BAR43/A/C/SFILM1E-2
1E-1
1E+0
1E+1
1E+2
IR(μA)
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values). 25
1E+1
1E+2
1E+3
1E+4
IR(μA)
Fig.3: Reverse leakage current versus junction
temperature.1
C(pF)
Fig. 4:
voltage applied (typical values). 1E-2
Zth(j-a)/Rth(j-a)5: Relativeto ambient with recommendedpad150
Rth(j-a) (°C/W)
Fig.
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35μm).
BAR42FILM BAR43/A/C/SFILM
PACKAGE MECHANICAL DATA
SOT-23 (Plastic)
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