BAS70-06FILM ,SMALL SIGNAL SCHOTTKY DIODESBAR 18® BAS70-04 06SMALL SIGNAL SCHOTTKY DIODESA1KK2K1N.C.A2ABAR18BAS70-04AKK1A1A2K2BAS70-06BAS70-0 ..
BAS70-06T , Low Turn-on voltage Fast switching Ultra-small surface mount package lead free version
BAS70-06T-7-F , SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70-06W ,Schottky DiodesFEATURES AND BENEFITSK2NCn VERY SMALL CONDUCTION LOSSESKAKAn NEGLIGIBLE SWITCHING LOSSES K2NCn LOW ..
BAS70-06W ,Schottky DiodesAPPLICATIONSFig.3 BAS70-04W diodehandbook, 2 columns3 configuration (symbol).• Ultra high-speed swi ..
BAS70-06W ,Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCW30LT1 ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BCW30LT1 ,General Purpose Transistors
BCW30LT1 ,General Purpose Transistors
BCW30LT1 ,General Purpose Transistors3R , SOURCE RESISTANCE (OHMS) R , SOURCE RESISTANCE (OHMS) e , NOISE VOLTAGE (nV)S S nR , SOURCE RE ..
BCW30LT1 ,General Purpose Transistors2BCW30LT1TYPICAL NOISE CHARACTERISTICS(V = –5.0 Vdc, T = 25°C)CE A10 1.0BANDWIDTH = 1.0 Hz7.0BANDWI ..
BCW30LT1G , General Purpose Transistors
BAR18FILM-BAS70-04FILM-BAS70-05FILM-BAS7-006FILM-BAS70-06FILM
SMALL SIGNAL SCHOTTKY DIODES
BAR 18
BAS70-04 06SMALL SIGNAL SCHOTTKY DIODES
December 2001 - Ed: 3A
Note 1: for double diodes, Ptot is the total dissipation of both diodes
ABSOLUTE RATINGS (limiting values)
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE* : dPtot
dTj Rthj a< − thermal runaway condition for a diode on its own heatsink
Low turn-on and highbreakdown voltage diodesin-
tendedfor ultrafast switching and UHF detectorsin
hybrid micro circuits.
DESCRIPTION
BAR 18 / BAS70-04 06
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS0.0 0.2 0.4 0.6 0.8 1.0 1.20.0E+0
2.0E-3
4.0E-3
6.0E-3
8.0E-3
1.0E-2
1.2E-2
1.4E-2
1.6E-2
1.8E-2
2.0E-2
IFM(A)
Fig. 1-1: Forward voltage drop versus forward
current (low level).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-4
1E-3
1E-2
7E-2
IFM(A)
Fig. 1-2: Forward voltage drop versus forward
current (high level).
* Effective carrier life time.
Pulse test: * tp = 380μs,δ < 2%
** tp = 5 ms,δ < 2%
BAR 18 / BAS70-04 06 10 1000.1
C(pF)
Fig.4: Junctioncapacitanceversus reverse voltage
applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01
Zth(j-a)/Rth(j-a)
Fig.5: Relative variationof thermal impedance
junctionto ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm). 5 10 15 20 25 30 35 40 45 50150
Rth(j-a) (°C/W)
Fig.6: Thermal resistance junctionto ambient ver-
sus coppersurface undereach lead (Epoxy printed
circuit board FR4, copper thickness: 35μm).5 101520253035404550556065701E-3
1E-2
1E-1
1E+0
1E+1
IR(μA)
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values). 25 50 75 100 125 1501E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(μA)
Fig.3: Reverse leakage current versus junction
temperature (typical values)
BAR 18 / BAS70-04 06
PACKAGE MECHANICAL DATASOT23 (Plastic)
FOOTPRINT DIMENSIONSInformation furnishedisbelieved tobeaccurateand reliable. However, STMicroelectronicsassumes noresponsibilityforthe consequencesof
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approval of STMicroelectronics.
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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