BAS70-04 ,Schottky DiodesBAR 18® BAS70-04 06SMALL SIGNAL SCHOTTKY DIODESA1KK2K1N.C.A2ABAR18BAS70-04AKK1A1A2K2BAS70-06BAS70-0 ..
BAS70-04 ,Schottky Diodes
BAS70-04 ,Schottky Diodes
BAS70-04 ,Schottky DiodesGeneral descriptionGeneral-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic pa ..
BAS70-04 ,Schottky Diodes
BAS70-04 ,Schottky DiodesElectrical CharacteristicsT = 25
BAR18-BAS7004-BAS70-04
SMALL SIGNAL SCHOTTKY DIODES
BAR 18
BAS70-04 06SMALL SIGNAL SCHOTTKY DIODES
December 2001 - Ed: 3A
Note 1: for double diodes, Ptot is the total dissipation of both diodes
ABSOLUTE RATINGS (limiting values)
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE* : dPtot
dTj Rthj a< − thermal runaway condition for a diode on its own heatsink
Low turn-on and highbreakdown voltage diodesin-
tendedfor ultrafast switching and UHF detectorsin
hybrid micro circuits.
DESCRIPTION
BAR 18 / BAS70-04 06
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS0.0 0.2 0.4 0.6 0.8 1.0 1.20.0E+0
2.0E-3
4.0E-3
6.0E-3
8.0E-3
1.0E-2
1.2E-2
1.4E-2
1.6E-2
1.8E-2
2.0E-2
IFM(A)
Fig. 1-1: Forward voltage drop versus forward
current (low level).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-4
1E-3
1E-2
7E-2
IFM(A)
Fig. 1-2: Forward voltage drop versus forward
current (high level).
* Effective carrier life time.
Pulse test: * tp = 380μs,δ < 2%
** tp = 5 ms,δ < 2%
BAR 18 / BAS70-04 06 10 1000.1
C(pF)
Fig.4: Junctioncapacitanceversus reverse voltage
applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01
Zth(j-a)/Rth(j-a)
Fig.5: Relative variationof thermal impedance
junctionto ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm). 5 10 15 20 25 30 35 40 45 50150
Rth(j-a) (°C/W)
Fig.6: Thermal resistance junctionto ambient ver-
sus coppersurface undereach lead (Epoxy printed
circuit board FR4, copper thickness: 35μm).5 101520253035404550556065701E-3
1E-2
1E-1
1E+0
1E+1
IR(μA)
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values). 25 50 75 100 125 1501E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(μA)
Fig.3: Reverse leakage current versus junction
temperature (typical values)
BAR 18 / BAS70-04 06
PACKAGE MECHANICAL DATASOT23 (Plastic)
FOOTPRINT DIMENSIONSInformation furnishedisbelieved tobeaccurateand reliable. However, STMicroelectronicsassumes noresponsibilityforthe consequencesof
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
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© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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