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Partno	Mfg	Dc	Qty	Available	Descript
BAL74		N/a	10	avai	General Purpose Diodes

BAL74 ,General Purpose DiodescharacteristicsBreakdown voltage 50 - - VV(BR)I = 100 µA(BR)Forward voltage - - 1VFI = 100 mAFRever ..
BAL74W ,High-speed diode
BAL99 ,Surface Mount Switching Diode
BAL99 ,Surface Mount Switching Diode
BAL99 ,Surface Mount Switching Diode Document Number 855352 (3) Rev. 2, 13-Feb-01BAL99Vishay SemiconductorsOzone Depleting Substances P ..
BAL99 ,Surface Mount Switching Diode
BCN31ABL253G7 , R/2R Ladder Network 8 Bit, 2512 Size Thick Film Leadless Chip Packages
BCN4D150J7 , Thick Film Chip Resistor Arrays
BCN4D150J7 , Thick Film Chip Resistor Arrays
BCN4D560J7 , Thick Film Chip Resistor Arrays
BCN4D560J7 , Thick Film Chip Resistor Arrays
BCP ,22 x 22 Ta2 N Back-Contact on Silicon with Part Mark Document Number: 6102758 Revision 07-Aug-01CHIPRESISTORSCHIPRESISTORSBCPThin Film Back-Contact Res ..

BAL74
General Purpose Diodes
BAL74
Silicon Switching Diode For high-speed switching applications
EHA00001
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BAL74
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
Test circuit for reverse recovery time
EHN00013ΙF
D.U.T.
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
BAL74
Reverse current I50100150EHB00002A
25 V
Forward current IF = f (TS)
50
100
150
200
300
Forward current IF = f (VF)A = 25°C0
Peak forward current IFM = f (tp)A = 25°C
EHB00004
BAL74
Forward voltage V
1.050100150AF
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