BA1L3Z ,NPN SILICON TRANSISTORNPN SILICON TRANSISTOR
BA1 L3Z
DESCRIPTION The BAIL3Z is designed for use in medium speed swi ..
BA1L4L ,NPN SILICON TRANSISTORNPtiSiLiCoN TRANSISTOR
BA1L4L
DESCRIPTION The BA1L4L is designed for use in medium speed swit ..
BA1L4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL . CHARACTERISTIC
R1 Input Resistance
R1/R2 _ ..
BA1L4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1L4Zon-chip resistor NPN silicon epitaxial transistorFor mid-speed ..
BA223 , Sub-Miniature High Voltage Rectifiers
BA225F , CR timer
BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849BLT1 ,General Purpose TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC849BLT1 ,General Purpose TransistorMaximum ratings are those values beyond which device damage can occur.MARKING DIAGRAM
BC849BLT1G , General Purpose Transistors
BC849BMTF ,NPN Epitaxial Silicon TransistorApplications• Suitable for automatic insertion in thick and thin-film circuits• Low Noise: BC849, B ..
BC849C , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 420 Document Number 851152 Rev. 1.2, 12-Mar-04BC846 to BC849VISHAYVishay SemiconductorsParameter Test ..
BA1L3Z
