BA1A4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC . . MAX.
NPN SILICON TRANSISTOR ..
BA1A4P ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
Input Resistance
Input Resistance
..
BA1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBA1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BA1F4M ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOL
CHARACTERISTIC
NPN SILICON TRANSISTOR
BA1 ..
BA1F4M ,NPN SILICON TRANSISTORs designed for use in medium speed switching
>uilt-in type NPN transistor equivalent circuit.
..
BA1F4N ,NPN SILICON TRANSISTORNPNSILICON TRANSISTOR
_ BA1 F4N
BulEiiiiC
DESCRIPTION The BA1F4N- is designed for use in m ..
BC848CWT1 ,CASE 419-02, STYLE 3 SOT-323/SC-70MAXIMUM RATINGS3Rating Symbol Value UnitSC−70/SOT−323CASE 419Collector-Emitter Voltage V VCEO1 STYL ..
BC848CWT1 ,CASE 419-02, STYLE 3 SOT-323/SC-70**Order this documentSEMICONDUCTOR TECHNICAL DATAby BC846AWT1/D * * *NPN Silicon*COLLECTORThese tra ..
BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849 , 0.250W General Purpose NPN SMD Transistor. 30V Vceo, 0.100A Ic, 200
BC849BLT1 ,General Purpose TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC849BLT1 ,General Purpose TransistorMaximum ratings are those values beyond which device damage can occur.MARKING DIAGRAM
BA1A4M
