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1 AMP SURFACE MOUNT CHOTTKY
BARRIER RECTIFIER
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B140A , SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
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B1366
LOW FREQUENCY POWER AMPLIFIER
KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current(DC) - 3 A C I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 2 W C a P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 - 60 V CEO C B I Collector Cut-off Current V = - 60V, I = 0 - 100 μA CBO CB E I Emitter Cut-off Current V = - 7V, I = 0 - 100 μA EBO EB C h DC Current Gain V = - 5V, I = - 0.5A 100 320 FE1 CE C h V = - 5V, I = - 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.5 - 1 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 0.5A - 0.7 - 1 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 9 MHz T CE C h Classification FE Classification Y G h 100 ~ 200 150 ~ 320 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
