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AUIRLL024ZTR
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
International
TGitt, Rectifier
AUTOMOTIVE GRADE
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Features
Advanced Process Technology
H EXFET® Power MOSFET
. Ultra Low On-Resistance D V(BR)DSS 55V
. Logic Level Gate Drive
. 150°C Operating Temperature G RDaon) typ. 48mn
. Fast Switching max. 60mn
. Repetitive Avalanche Allowed up to ijax s ID 5.0A
o Lead-Free, RoHS Compliant
o Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive ava- SOT-223
lanche rating . These features combine to make this AUIRLL024Z
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of G D S
other applications.
Gate Drain Source
Base Part Number Package Type Forgtandard PaCkouantitv Orderable Part Number
Tube 95 AUIRLL024Z
AUIRLL024Z SOT-223 Tape and Reel 2500 AUlRLL024ZTF1
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, Vss © 10V Cr) 5.0
ID © T, = 70°C Continuous Drain Current, Vas @ 10V C) 4.0 A
IDM Pulsed Drain Current Ci) 40
PD @TA = 25°C Power Dissipation © 2.8
PD ©T, = 25°C Power Dissipation 1.0 W
Linear Derating Factor © 0.02 W/°C
VGS Gate-to-Source Voltage 1 16 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 21 mJ
EAS (tested ) Single Pulse Avalanche Energy Tested Value © 38
lAn Avalanche Current CO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy S mJ
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range I
Thermal Resistance
Parameter Typ. Max. Units
Fu, Junction-to-Ambient (PCB mount, steady state) © - 45 °C/W
Flo, Junction-to-Ambient (PCB mount, steady state) - 120
HEXFET® is a registered trademark of International Rectifier.
'Qualification standards can be found at http:///
© 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
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Static Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, b = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.049 - V/°C Reference to 25°C, ID = 1mA
- 48 60 I/ss = 10V, ID = 3.0A ©
Rosom Static Drain-to-Source On-Resistance - - 80 mn I/ss = 5.0V, ID = 3.0A ©
- - 100 I/ss = 4.5V, b = 3.0A ©
VGS(lh) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vas, b = 250pA
gfs Forward Transconductance 7.5 - - S Vos = 25V, ID = 3.0A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, VGS = 0V
- - 250 Vos = 55V, Vas = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 200 nA I/ss = 16V
Gate-to-Source Reverse Leakage - - -200 Vss = -16V
Dynamic Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge - 7.0 11 ID = 3.0A
Qgs Gate-to-Source Charge - 1.5 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 4.0 - Ves = 5.0V ©
tion) Turn-On Delay Time - 8.6 - VDD = 28V
t, Rise Time - 33 - ns ID = 3.0A
tom Turn-Off Delay Time - 20 - Re = 56 n
t, Fall Time - 15 - Vss = 5.0V ©
Ciss Input Capacitance - 380 - Vss = 0V
Coss Output Capacitance - 66 - Vos = 25V
Crss Reverse Transfer Capacitance - 36 - pF f = 1.0MHz
Coss Output Capacitance - 220 - I/ss = OV, l/rs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 53 - I/ss = OV, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 93 - Vss = 0V, Vos = 0V to 44V (9
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
IS Continuous Source Current - - 5.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 40 integral reverse G
(Body Diode) OD p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 3.0A, VGS = 0V ©
tr, Reverse Recovery Time - 15 23 ns TJ = 25°C, IF = 3.0A, VDD = 28V
Qrr Reverse Recovery Charge - 9.1 14 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting TJ = 25°C, L = 4.8mH
Rs = 259, IAS = 3.0A, Vss =1OV.
Part not recommended for use above this value.
© Pulse width f 1.0ms; duty cycle 5 2%.
© Cass eff. is a fixed capacitance that gives the same
charging time as Coss while 1hos is rising from
0 to 80% VDSS-
©Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
©This value determined from sample failure population,
starting TJ = 25°C, L = 4.8mH, Re = 259, has = 3.0A,
VGS =10V.
©When mounted on 1 inch square copper board.
©When mounted on FR-4 board using minimum
recommended footprint.
© 2014 International Rectifier
Submit Datasheet Feedback March 26, 2014
