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AUIRGP4063D
600V co-pack Automotive Trench IGBT in a TO-247AC package
International
1ng Rectifier
AUTOMOTIVE GRADE
AUIRGP406'3ID
(il0lIIitmMlrt%r0G
INSULA TED GA TE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junctiontemperature 175 °C
5 pS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON)Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tightparameterdistribution
Lead Free Package
Benefits
High Efficiency in a wide range of applications
n-channel
Vcss = 600V
IC = 60A, TC = 100°C
tsc l 5ps, TJ(max) = 175°C
VCE(on) typ. = 1.6V
q Suitable for a wide range of switching frequencies due to C E
Low VCE (ON) and Low Switching losses G
q Ruggedtransient Performance forincreased reliability TO'247AC TO'247AD
. . . AUIRGP4063D AUIRGP4063D-E
q Excellent Currentsharing In parallel operation
q Low EMI G C E
Gate Collector Emitter
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRGP4063D TO-247 Tube 25 AUI RGP4063D
AUI RGP4063D- E TO-247 Tube 25 AUI RGP4063D-E
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
Vcss Collector-to-Emitter Voltage 600 V
lc @ TC = 25°C Continuous Collector Current 100
r, @ TC = 100°C Continuous Collector Current 60
(n, Pulse Collector Current, Vas = 15V 144
L, Clamped Inductive Load Current, Vas = 20V CO 192 A
Ir, @ TC = 25°C Diode Continous Forward Current 82
IF @ TC = 100°C Diode Continous Forward Current 50
Irv, Diode Maximum Forward Current Co') 192
VGE Continuous Gate-to-Emitter Voltage :20 V
Transient Gate-to-Emitter Voltage A30
Fl, © To = 25°C Maximum Power Dissipation 330 W
PD © Tc = 100°C Maximum Power Dissipation 170
Tu Operating Junction and -55 to +175
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 Ibf-in (1.1 N-m)
il © 2013 International Rectifier July 12, 2013
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Thermal Resistance
Parameter Min. Typ. Max. Units
RoJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) - - 0.45 °C/W
RoJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) - - 0.92
Ross Thermal Resistance, Case-to-Sink (flat, greased surface) - 0.24 -
ROJA Thermal Resistance, Junction-to-Ambient (typical socket mount) - 80 -
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES CtylecttttyE mitter Breakdown VolToge 600 - - V l/ss = 0V, k: = 150pA C9 CT6
)V(BR)CES/)TJ Temperature Coeff. of Breakdown Voltage - 0.30 - V/°C Vas = ov, IC = 1mA (25°C-175°C) cw
- 1.6 1.9 Ic = 48A, Vas = 15V, T, = 25°C 5,6,7
Vegan) Collector-to-Emitter Saturation Voltage - 1.9 - V k: = 48A, Vss = 15V, T: = 150°C 9.10.11
- 2.0 - Ic = 48A, Vss = 15V, T, = 175°C
Vauth) Gate Threshold Voltage 4.0 - 6.5 V VCE = Vas, IC = 1.4mA 9, 10,
)VeEahVJTJ Threshold Voltage temp. coefficient - -21 - mV/°C ch = Vas, lc = 1.0mA (25°C - 175°C) ll, 12
gfe Forward Transconductance - 32 - S VCE = 50V, lc = 48A, PW = 80ps
Ices Collector-to-Emitter Leakage Current - 1.0 150 PA VGE = 0V, l/cs = 600V
- 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop - 1.95 2.91 V IF = 48A 8
- 1.45 - IF = 48A, T: =175°C
lass Gate-to-Emitter Leakage Current - - t100 nA Vss = t20V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
ch Total Gate Charge (turn-on) - 95 140 la = 48A 24
Qge Gate-to-Emitter Charge (turn-on) - 28 42 nC Vss =15V CTI
Qgc Gate-to-Collector Charge (turn-on) - 35 53 Vcc = 400V
E0n Turn-On Switching Loss - 625 1141 lc = 48A, Vcc = 400V, Vss = 15V CT4
Eon Turn-Off Switching Loss - 1275 1481 pd Rs =10) , L = 200pH, Ls =150nH,TJ = 25°C
E10131 Total Switching Loss - 1900 2622 E nergylosses include tdl &doctsreverserecovery
tum) Turn-On delay time - 60 78 k: = 48A, Vcc = 400V, Vas = 15V CT4
t, Rise time - 40 56 ns Ra =10) , L = 200pH, Ls =150nH,TJ = 25°C
tam) Turn-Off delay time - 145 176
t, Fall time - 35 46
Eon Turn-On Switching Loss - 1625 - IC = 48A, Vcc = 400V, Vas=15V 13, 15
Eott Turn-Off Switching Loss - 1585 - pJ Ra--10) , L=200pH, Ls=150nH, T, =175°C © CT4
Etotal Total Switching Loss - 3210 - Energylosses indudetdl &dodereverserecovery WF1,WF2
tum) Turn-On delay time - 55 - Ic = 48A, Vcc = 400V, Vas = 15V 14, 16
t, Rise time - 45 - ns Rs =10) , L = 200pH, Ls =150nH CT4
tum) Turn-Off delay time - 165 - TJ = 175°C WFI
t, Fall time - 45 - WF2
Cies Input Capacitance - 3025 - pF Vss = ov 23
Coes Output Capacitance - 245 - Vcc = 30V
Cres Reverse Transfer Capacitance - 90 - f = 1 .OMhz
TJ:175°C,|C:192A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 480V, Vp =600V CT2
Rg =10) ,vGE = +15V to ov
SCSOA Short Circuit Safe Operating Area 5 - - us Vcc; = 400V, Vp =600V 22, 013
Rg=10),VeE=+15Vt00V wm
Erec Reverse Recovery Energy of the Diode - 845 - pJ T, = 175°C 17, 18. 19
t,, Diode Reverse Recovery Time - 115 - ns Vcc = 400V, IF = 48A 20, 21
l, Peak Reverse Recovery Current - 4O - A Vas =15V, Hg =10) , L =200pH, LS =150nH wrs
Notes:
co Vcc = 80% (VCES), VGE = 20V, L = 200pH, Rs = Ion. 6) Pulse width limited by max. junction temperature.
© This is only applied to TO-247AC package. © Referto AN-1086 forguidelines for measuring V(an)css safely.
iil © 2013 International Rectifier July 12, 2013
