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AUIRGDC0250
1200V Automotive Low VCEon Discrete IGBT in a Super TO-220 package
International
TOR Rectifier
AUTOMOTIVE GRADE
AUIRGDGOZSO
Features
Square RBSOA
Benefits
losses
Low EMI
Application
. PTC Heater
. Relay Replacement
Low VCE (on) Planar IGBT Technology
Low Switching Losses
100% of The Parts Tested for ILMG)
Positive VCE (on) Temperature Coefficient.
Lead-Free, RoHSCompliant
Automotive Qualified *
Device optimized for soft switching applications
High Efficiency due to Low VCEW), low switching
n-channel
Vcss = 1200V
lc = 81A@ TC =100°C
VCE(on) typ. = 1.37V@ 33A
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Super-TO-220
AUIRGDC0250
Gate Collector Emitter
St d d P k
Base part number Package Type an ar ac . Complete Part Number
Form Quantity
AUIRGDCO250 Super-TO-220 Tube 50 AUIRGDC0250
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
chs Collector-to-Emitter Voltage 1200 V
b © To = 25''C Continuous Collector Current 141 C9
b © To = 100°C Continuous Collector Current 81 A
ICM Pulse Collector Current, VGE = 15V (2) 99
Lu Clam ped Inductive Load Current, Vss = 20V (O 99
Vas Contihuous G.attttEI"itttr. Voltage t20 V
Transient Gate-to-Emitter Voltage :30
Po @ To = 25°C Maximum Power Dissipation 543 W
Pro © To = 100°C Maximum Power Dissipation 217
T, Operating Junction and
-55 to +150
TSTG Storage Temperature Range I
Soldering Temperature, for 10 sec. (1.6mm from case) 300
Thermal Resistance
Parameter Min. Typ. Max. Units
Rch (IGBT) Thermal Resistance Junction-to-Case (IGBT)® - - 0.23
chs Thermal Resistance, Case-to-Sink (flat, greased surface) - 0.50 - “CNV
RqJA Thermal Resistance, Junction-to-Ambient - 62 -
*Qualification standards can be found at h_ttp://wwvv-irt.com/
fl © 2014 International Rectifier
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December1, 2014
Electrical Characteristics © Ta = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
mecEs Collector-to-Emir Breakdown Voltage 1200 - - V VGE = 0V, Ic = 250pA <3)
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.2 - VPC VGE = 0V, Ic = 1mA (25oC-150''C)(T
- 1.37 1.57 V Ic = 33A, Vars = 15V, T, = 25°C
VCE(on) Collector-to-emitter Saturation Voltage - 1.45 - k; = 33A, Vars = 15V, T J = 150°C
VGEW Gate Threshold Voltage 3.0 - 6.0 V VCE = Vas, k: = 250pA
AVGEMVATJ Threshold Voltage temp. coefficient - -15 - mV/°C VCE = Vas, k: = 250pA (25°C - 150°C)
gfe Forward Transconductance - 30 - S VCE = 50V, lc = 33A PW = 20ps
- - 250 Vas = 0V, VCE = 1200V
ICES Collector-to-hitter Leakage Current - - 2.0 pA Vas = 0V, VCE = 10V, T J = 25°C
- - 1000 Vas = 0V, VCE = 1200V, T, = 150°C
lass Gate-to-Emilie, Leakage Current - - t100 nA Vas = tdOV
Switching Characteristics © T., = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) - 151 227 b = 33A
099 Gate-to-Emilie, Charge (turn-on) - 26 39 nC Vas = 15V
Qgc Gate-to-Collector Charge (turn-on) - 62 93 Vcc = 600V
L; = 33A, Vcc = 600V, Vas = 15V
Eott Turn-Off Switching Loss - 15 16 mJ Ra = 59, L = 400pH, To = 25°C
Energy losses include tail
tion Turn-Off delay time - 485 616 ns L; = 33A, Vcc = 600V, Vas = 15V
t, Fall time - 1193 1371 Ra = 59, L = 400pH, T, = 25°C
b = 33A, Vcc = 600V, VGE = 15V
Eo Turn-Off Switching Loss - 29 - mJ Rs = 59, L = 400pH, To = 150°C
Energy losses include tail
tion Turn-Off delay time - 689 - ns t; = 33A, Vcc; = 600V, VGE = 15V
t, Fall time - 2462 - Rs = 59, L = 400pH, T, = 150°C
Cies Input Capacitance - 3804 - I/ss = ov
Coes Output Capacitance - 161 - pF Vcc = 30V
C,es Reverse Transfer Capacitance - 31 - f= 10th
T, = 150°C, k: = 99A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 960V, Vp s 1200V
Rg = 59, Vas = +20V to 0V
Notes:
OD Vcc = 80% (I/css), Vas = 20V, L = 400pH, Rs = 509.
© Pulse width limited by max. junction temperature.
© Refer to AN-1086 for guidelines for measuring V
(BR)CES
© R9 is measured at T, of approximately 90°C.
© Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
safely.
© 2014 International Rectifier
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