AUIRFI4905 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB Packageapplications. Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity ..
AUIRGDC0250 ,1200V Automotive Low VCEon Discrete IGBT in a Super TO-220 packageapplications• High Efficiency due to Low V , low switchingCE(on)Closses• Rugged transient performan ..
AUIRGP4063D ,600V co-pack Automotive Trench IGBT in a TO-247AC packageapplications Suitable for a wide range of switching frequencies due toEECCGGLow V and Low Switchin ..
AUIRLL024ZTR ,Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Packageapplications.Gate Drain SourceStandard PackBase Part Number Package Type Orderable Part NumberForm ..
AUIRS2110S ,Automotive High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down, High CreepageBlock Diagram 7 Input/Output Pin Equivalent Circuit Diagram 8 Lead Definitions 9 Lead Assignments 9 ..
AUR9713AGH , 1.5MHz, 1A, STEP DOWN DC-DC CONVERTER
B9NC60 , N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh™II MOSFET
BA00ASFP , Regulator, low drop-out type with ON/OFF switch
BA00CC0WFP , 1A Low Dropout Voltage Regulator with Shut Down Switch (Adjustable Voltage)
BA00CC0WT-V5 , 1A Low Dropout Voltage Regulator with Shut Down Switch (Adjustable Voltage)
BA00DD0WHFP , Standard Variable Output LDO Regulators with Shutdown Switch
BA00JC5W , 1.5A Secondary LDO Regulators for Local Power Supplies
AUIRFI4905
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package
applications. Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity AUIRFI4905 TO-220 Full-Pak Tube 50 AUIRFI4905 Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ -10V (Silicon Limited) -39 D C (Bottom) GSA I @ T = 100°C Continuous Drain Current, V @ -10V (Silicon Limited) -27 D C (Bottom) GSI Pulsed Drain Current -155 DM P @T = 25°C Power Dissipation 55 W D C (Bottom) Linear Derating Factor 0.37 W/°C V Gate-to-Source Voltage ± 20 V GS mJ E Single Pulse Avalanche Energy (Thermally Limited) 1247 AS A I Avalanche Current See Fig. 14, 15, 22a, 22b AR E Repetitive Avalanche Energy AR T Operating Junction and -55 to + 175 J °C T Storage Temperature Range STG Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case ––– 2.73 R °C/W JCJunction-to-Ambient ––– 65 R JAHEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http:/// 1 © 2013 International Rectifier September 11, 2013 Downloaded from: http://www.ic-phoenix.com/stock/ AUIRFI4905 Static
