ATP212 ,N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAKMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 60 VDSS ..
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ATP212
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK
ATP212-TL-H
Features • Low ON-resistance • Large current
• 4V drive • Slim package
• Halogen free compliance • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 35 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 105 A
Allowable Power Dissipation PD Tc=25°C40 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 19 mJ
Avalanche Current *2 IAV 18 A
Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse
Package Dimensionsunit : mm (typ)
7057-001
TP212N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Product & Package Information• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection2,4
