AN1L3Z ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
Input Resistance
Low Level Input Vo ..
AN1L4M ,PNP SILICON TRANSISTORPNP SILICON TRANSISTOR
AN1L4M
DESCRIPTION The AN1L4M IS designed for use In medium speed swit ..
AN2011S ,Correlated Double Sampling ICFeatures6 117 10• Available for CCD of up to 768H by using the high-8 9 speed sampling circuit• T ..
AN2012S ,Correlated Double Sampling ICapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion ..
AN2012SB ,Correlated Double Sampling ICMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
AN2018S ,Correlated Double Sampling ICElectrical Characteristics (V =4.8V, Ta=25– 2˚C)CCParameter Symbol Condition min typ max UnitSupply ..
AP28G40GEO , N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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AP3001S-3.3TRE1 , 150kHz 3A PWM BUCK DC-DC CONVERTER
AN1L3Z
