AN-801 ,Designing with LITTLE FOOT庐 Power MOSFETs in Surface-Mount (SO-8) Packages FaxBack 408-970-560006-Jun-001AN801Vishay SiliconixDriving Inductive Loads When drive is re-enab ..
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APM2300AAC-TR , N-Channel Enhancement Mode MOSFET
APM2300AAC-TR , N-Channel Enhancement Mode MOSFET
APM2301 , P-Channel Enhancement Mode MOSFET
APM2301 , P-Channel Enhancement Mode MOSFET
APM2301A , P-Channel Enhancement Mode MOSFET
APM2305 , P-Channel Enhancement Mode MOSFET
AN-801
Designing with LITTLE FOOT庐 Power MOSFETs in Surface-Mount (SO-8) Packages
ECN: S-00164—Rev. F, 31-Jan-00
DWG: 5498
h x 45
0.25 (Gage Plane)
AN801
Vishay Siliconix
Designing with LITTLE FOOT Power MOSFETs
in Surface-Mount (SO-8) PackagesVishay Siliconix’ LITTLE FOOT power MOSFETs pack potent
power handling into tiny surface-mount packages. The
standard-outline, 8-pin SOIC package (Figure 1) has a copper
leadframe that maximizes thermal transfer while maintaining
complete compatibility with existing surface-mount
technology. The complementary n- and p-channel Si9942DY
LITTLE FOOT device can be used to drive inductive loads
such as motors, solenoids, and relays directly, or as a
low-impedance buffer to drive larger power MOSFETs or other
capacitive loads.
LITTLE FOOT devices offer measurable advantages in a
variety of low-voltage motor drive applications. In a computer
hard disk, key features such as track density, seek time, and
power consumption are directly related to the efficiency of the
spindle motor and the head actuator drive circuitry. Disk drives
must squeeze maximum motor performance from low-voltage
supplies (traditionally, well-regulated 12-V supplies) provided
by the computer system. The advent of sophisticated
full-function portable computers brings new performance
expectations of battery driven systems (and 5-V operation).
For 12-V battery powered applications, designers must strive
to limit voltage drops—which waste motor drive voltage,
reduce battery life, and contribute heat that must be dissipated,
often at considerable expense. LITTLE FOOT devices such as
the complementary n- and p-channel Si9942DY substantially
increase the motor size that can be driven from surface-mount
power devices without additional heatsinking.
The Si9942DY can also be used in power conversion
applications as a buffer stage to drive highly capacitive power
MOSFET gates at the high frequencies used in modern
designs. For example, by using an Si9942DY to buffer the
output of highly efficient CMOS PWM controllers, capacitive
loads in excess of 3000 pF can be efficiently switched at rates
greater than 1 MHz. This switching ability greatly extends the
output power range of CMOS switchmode ICs.
This application note describes the basic MOSFET
parameters that are important when driving inductive and
capacitive loads and shows characteristics of the Si9942DY.