AMP01BX ,Low Noise, Precision Instrumentation AmplifierFEATURESLow Offset Voltage: 50 mV Max18-Lead CerdipVery Low Offset Voltage Drift: 0.3 mV/8C MaxLow ..
AMP01EX ,Low Noise, Precision Instrumentation AmplifierCHARACTERISTICS (@ V = 615 V, R = 10 kV, R = 2 kV, T = +258C, unless otherwise noted)S S L AAMP01A ..
AMP01EX ,Low Noise, Precision Instrumentation Amplifierfeatures make the20 RR 1G GAMP01 ideal for high speed data acquisition systems.2 19 TEST PIN*TEST P ..
AMP01FX ,Low Noise, Precision Instrumentation Amplifierspecifications. TheAMP01 slews at 4.5 V/m s into capacitive loads of up to 15 nF, 20-Lead SOICsettl ..
AMP01GS ,Low Noise, Precision Instrumentation AmplifierSpecifications subject to change without notice.–2– REV. DAMP01(@ V = 615 V, R = 10 kV, R = 2 kV, T ..
AMP02FS ,High Accuracy 8-Pin Instrumentation AmplifierCHARACTERISTICS S CM A AMP02E AMP02FParameter Symbol Conditions Min Typ Max Min ..
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AMP01AX-AMP01AX/883C-AMP01BX-AMP01EX-AMP01FX-AMP01GS
Low Noise, Precision Instrumentation Amplifier
REV.D
Low Noise, Precision
Instrumentation Amplifier
GENERAL DESCRIPTIONThe AMP01 is a monolithic instrumentation amplifier designed
for high-precision data acquisition and instrumentation applica-
tions. The design combines the conventional features of an
instrumentation amplifier with a high current output stage. The
output remains stable with high capacitance loads (1 mF), a
unique ability for an instrumentation amplifier. Consequently,
the AMP01 can amplify low level signals for transmission
through long cables without requiring an output buffer. The output
stage may be configured as a voltage or current generator.
Input offset voltage is very low (20 mV), which generally elimi-
nates the external null potentiometer. Temperature changes
have minimal effect on offset; TCVIOS is typically 0.15 mV/°C.
Excellent low-frequency noise performance is achieved with a
minimal compromise on input protection. Bias current is very
low, less than 10 nA over the military temperature range. High
common-mode rejection of 130 dB, 16-bit linearity at a gain of
1000, and 50 mA peak output current are achievable simulta-
neously. This combination takes the instrumentation amplifier
one step further towards the ideal amplifier.
AC performance complements the superb dc specifications. The
AMP01 slews at 4.5 V/ms into capacitive loads of up to 15 nF,
settles in 50 ms to 0.01% at a gain of 1000, and boasts a healthy
26 MHz gain-bandwidth product. These features make the
AMP01 ideal for high speed data acquisition systems.
Gain is set by the ratio of two external resistors over a range of
0.1 to 10,000. A very low gain temperature coefficient of
10 ppm/°C is achievable over the whole gain range. Output
voltage swing is guaranteed with three load resistances; 50 W,
500 W, and 2 kW. Loaded with 500 W, the output delivers13.0 V minimum. A thermal shutdown circuit prevents de-
struction of the output transistors during overload conditions.
The AMP01 can also be configured as a high performance op-
erational amplifier. In many applications, the AMP01 can be
used in place of op amp/power-buffer combinations.
PIN CONFIGURATIONS
18-Lead Cerdip
TOP VIEW
(Not to Scale)OUTPUT
REFERENCE
–IN
VOOS NULL
SENSE
TEST PIN*
VOOS NULL
–VOP
+IN
VIOS NULL
VIOS NULL
+VOP
*MAKE NO ELECTRICAL CONNECTION
AMP01 BTC/883
28-Terminal LCC
NC = NO CONNECT27123426131415161718
VOOS NULL
VOOS NULL
TEST PIN*
VIOS NULL
+VOP
–IN+INNC
IOS
NULL
SENSE
REF
OUT
*MAKE NO ELECTRICAL CONNECTION
20-Lead SOIC
–VOP
OUTPUT
REFERENCE
TEST PIN*
–IN
VOOS NULL
SENSE
TEST PIN*
VOOS NULL
+VOP
TEST PIN*
+IN
VIOS NULLRG
VIOS NULL
*MAKE NO ELECTRICAL CONNECTION
FEATURES
Low Offset Voltage: 50 mV Max
Very Low Offset Voltage Drift: 0.3 mV/8C Max
Low Noise: 0.12 mV p-p (0.1 Hz to 10 Hz)
Excellent Output Drive: 610 V at 650 mA
Capacitive Load Stability: to 1 mF
Gain Range: 0.1 to 10,000
Excellent Linearity: 16-Bit at G = 1000
High CMR: 125 dB min (G = 1000)
Low Bias Current: 4 nA Max
May Be Configured as a Precision Op Amp
Output-Stage Thermal Shutdown
Available in Die Form
AMP01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, –258C £ TA £ +858C for E, F
grades, 08C £ TA £ +708C for G grade, unless otherwise noted)
AMP01
AMP01
ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)NOISE
NOTESGuaranteed by design.Gain tempco does not include the effects of gain and scale resistor tempco match.–55°C £ TA £ +125°C for A/B grades, –25°C £ TA £ +85°C for E/F grades, 0°C £ TA £ 70°C for G grades.
Specifications subject to change without notice.
ORDERING GUIDE*Standard military drawing available.
ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)NOTEGuaranteed by design.
Specifications subject to change without notice.
AMP01
DICE CHARACTERISTICSDie Size 0.111 · 0.149 inch, 16,539 sq. mils
(2.82 · 3.78 mm, 10.67 sq. mm)
AMP01
WAFER TEST LIMITS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)Offset Referred to Input
Input Bias Current
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
Figure 1.Simplified Schematic
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
AMP01
ELECTRICAL CHARACTERISTICS (@ VS = 615 V, RS = 10 kV, RL = 2 kV, TA = +258C, unless otherwise noted)Small-Signal Bandwidth (–3 dB)
Slew Rate
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
AMP01Figure 2.Input Offset Voltage
vs. Temperature
Figure 5.Output Offset Voltage
Change vs. Supply Voltage
TEMPERATURE – 8C
INPUT OFFSET CURRENT – nA
0.4Figure 8.Input Offset Current
vs. Temperature
Figure 3.Input Offset Voltage
vs. Supply Voltage
Figure 6.Input Bias Current
vs. Temperature
Figure 9.Common-Mode Rejection
vs. Voltage Gain
Figure 4.Output Offset Voltage
vs. Temperature
Figure 7.Input Bias Current
vs. Supply Voltage
Figure 10.Common-Mode Rejection
vs. Frequency
–Typical Performance Characteristics
Figure 11.Common-Mode Voltage
Range vs. Temperature
Figure 14.Maximum Output Voltage
vs. Load Resistance
Figure 17.Closed-Loop Voltage
Gain vs. Frequency
Figure 12.Positive PSR
vs. Frequency
Figure 15.Maximum Output Swing
vs. Frequency
Figure 18.Total Harmonic Distortion
vs. Frequency
Figure 13.Negative PSR
vs. Frequency
Figure 16.Closed-Loop Output
Impedance vs. Frequency
Figure 19.Total Harmonic Distortion
vs. Load Resistance
AMP01Figure 21.Slew Rate vs.
Load Capacitance
Figure 24.RTI Voltage Noise
Density vs. Gain
Figure 27.Positive Supply Current
vs. Temperature
Figure 20.Slew Rate vs.
Voltage Gain
Figure 23.Voltage Noise Density
vs. Frequency
Figure 26.Negative Supply Current
vs. Supply Voltage
Figure 22.Settling Time to 0.01%
vs. Voltage Gain
Figure 25.Positive Supply Current
vs. Supply Voltage
Figure 28.Negative Supply Current
vs. Temperature
GAINThe AMP01 uses two external resistors for setting voltage gain
over the range 0.1 to 10,000. The magnitudes of the scale resis-
tor, RS, and gain-set resistor, RG, are related by the formula:
G = 20 · RS/RG, where G is the selected voltage gain (refer to
Figure 29).
Figure 29.Basic AMP01 Connections for Gains
0.1 to 10,000
The magnitude of RS affects linearity and output referred errors.
Circuit performance is characterized using RS = 10 kW when
operating on –15 volt supplies and driving a –10 volt output. RS
may be reduced to 5 kW in many applications particularly when
operating on –5 volt supplies or if the output voltage swing is
limited to –5 volts. Bandwidth is improved with RS = 5 kW and
this also increases common-mode rejection by approximately
6 dB at low gain. Lowering the value below 5 kW can cause
instability in some circuit configurations and usually has no
advantage. High voltage gains between two and ten thousand
would require very low values of RG. For RS = 10 kW and
AV = 2000 we get RG = 100 W; this value is the practical lower
limit for RG. Below 100 W, mismatch of wirebond and resistor
temperature coefficients will introduce significant gain tempco
errors. Therefore, for gains above 2,000, RG should be kept
constant at 100 W and RS increased. The maximum gain of
10,000 is obtained with RS set to 50 kW.
Metal-film or wirewound resistors are recommended for best
results. The absolute values and TCs are not too important,
only the ratiometric parameters.
AC amplifiers require good gain stability with temperature and
time, but dc performance is unimportant. Therefore, low cost
metal-film types with TCs of 50 ppm/°C are usually adequate
for RS and RG. Realizing the full potential of the AMP01’s offset
voltage and gain stability requires precision metal-film or wire-
wound resistors. Achieving a 15 ppm/°C gain tempco at all gains
requires RS and RG temperature coefficient matching to
5 ppm/°C or better.
INPUT AND OUTPUT OFFSET VOLTAGESInstrumentation amplifiers have independent offset voltages
associated with the input and output stages. While the initial
offsets may be adjusted to zero, temperature variations will
cause shifts in offsets. Systems with auto-zero can correct for
offset errors, so initial adjustment would be unnecessary. How-
ever, many high-gain applications don’t have auto zero. For
these applications, both offsets can be nulled, which has mini-
mal effect on TCVIOS and TCVOOS
The input offset component is directly multiplied by the ampli-
fier gain, whereas output offset is independent of gain. There-
fore, at low gain, output-offset errors dominate, while at high
gain, input-offset errors dominate. Overall offset voltage, VOS,
referred to the output (RTO) is calculated as follows;
VOS (RTO) = (VIOS · G) + VOOS(1)
where VIOS and VOOS are the input and output offset voltage
specifications and G is the amplifier gain. Input offset nulling
alone is recommended with amplifiers having fixed gain above
50. Output offset nulling alone is recommended when gain is
fixed at 50 or below.
In applications requiring both initial offsets to be nulled, the
input offset is nulled first by short-circuiting RG, then the output
offset is nulled with the short removed.
The overall offset voltage drift TCVOS, referred to the output, is
a combination of input and output drift specifications. Input
offset voltage drift is multiplied by the amplifier gain, G, and
summed with the output offset drift;
TCVOS (RTO) = (TCVIOS · G) + TCVOOS(2)
where TCVIOS is the input offset voltage drift, and TCVOOS is
the output offset voltage specification. Frequently, the amplifier
drift is referred back to the input (RTI), which is then equiva-
lent to an input signal change;
TCVOS (RTI) = TCVIOS (3)
For example, the maximum input-referred drift of an AMP01 EX
set to G = 1000 becomes;
TCVOS (RTI ) = 0.3 mV/°C + V/°C max
INPUT BIAS AND OFFSET CURRENTSInput transistor bias currents are additional error sources that
can degrade the input signal. Bias currents flowing through the
signal source resistance appear as an additional offset voltage.
Equal source resistance on both inputs of an IA will minimize
offset changes due to bias current variations with signal voltage
and temperature. However, the difference between the two bias
currents, the input offset current, produces a nontrimmable
error. The magnitude of the error is the offset current times the
source resistance.
A current path must always be provided between the differential
inputs and analog ground to ensure correct amplifier operation.
Floating inputs, such as thermocouples, should be grounded
close to the signal source for best common-mode rejection.
