AH5012CM ,30 V, 500 mW, monolithic analog current switchApplications
I A/D and D/A converters
I Micropower converters
I Industrial controllers
I Po ..
AH5012CN ,30 V, 500 mW, monolithic analog current switchGeneral Description
A versatile family of monolithic JFET analog switches eco-
nomically fulfil ..
AH5020CJ ,monolithic analog current switchFeatures
I Interfaces with standard TTL
I "ON" resistance match 2n
I Low "ON" resistance 1 ..
AH5771-PG-B , SINGLE PHASE HALL EFFECT LATCH SMART FAN
AH5792-ZG-7 , AH5792 smart fan driver with internal Hall sensor for single phase brushless DC motor
AH9249NTR-G1 , High Sensitivity Micropower Omnipolar Hall-Effect Switch
AM29F400BB-45EI , 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-45SC , 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-55EE , 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-55EE0 , 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-55EF , 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BB-55EF , 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AH5010CN-AH5011CN-AH5012CM-AH5012CN
30 V, 500 mW, monolithic analog current switch
National
Semiconductor
AH5009/AH5010/AH5011/AH5012 Monolithic
Analog Current Switches
General Description
A versatile family of monolithic JFET analog switches eco-
nomically fulfills a wide variety of multiplexing and analog
switching applications.
Even numbered switches may be driven directly from stan-
dard 5V logic, whereas the odd numbered switches are in-
tended for applications utilizing 10V or 15V logic. The mono-
lithic construction guarantees tight resistance match and
tratrk.
For voltage switching applications see LF13331, LF13332,
and LF13333 Analog Switch Family, or the CMOS Analog
Switch Family.
Applications
rt MD and WA converters
n Micropower converters
n Industrial controllers
In Position controllers
I! Data acquisltion
n Active filters
II Signal muItiplexers/demultiplexers
a Multiple channel A60
tt Quad compressors/expanders
n Choppers/demodulators
n Programmable gain amplifiers
I: High impedance voltage buffer
a Sample and hold
Features
I: Interfaces with standard Trl. and CMOS
I: "ON" resistance match 2n
a Low "ON" resistance 1000
a Very low leakage 50 pA
a Large analog signal range i10V peak
a High switching speed 150 ns
n Excellent isolation between 80 dB
channels at 1 kHz
Connection and Schematic Diagrams (All switches shown are for logical "I" input)
DuaI-ln-Llne Package
DuaI-In-Llne Package
4 CHANNEL 4 SPST
LOGIC DRIVE MUX SWITCHES
5V LOGIC AH501OC AH50120
' 15V LOGIC AH5009C AH5011C
TO! VIEW
AHSOOSC and AH501OC MUX Switches
(4-Channel Verslon Shown)
Order Number AH5009CM,
AHSOOQCN, AH5010CM or AH501OCN
See NS Package Number M14A or N14A
cuwsnunm: FET
C”! BIAIII
Note: All diode cathodes are Internally connected to the substrate.
10' WE!
AH5011C and AH50120 SPST Swltches
(Quad Varslon Shown)
Order Number AH5011CM,
AH5011CN, AH5012CM or AH50120N
See NS Package Number M16A or N16A
UICOWWTIB DIM" TL/H/5859-1
ZLOSHV/ l IOSHV/OLOSHV/GOOSHV
Absolute Maximum Ratings (Note1)
AH5009/AH5010/AH5011/AH,_5012
It MllltaryfAtsrottpatte specltled devlces are required, Drain Current 30 mA
please contact the National Semiconductor Sales Soldering Information:
OfflttefDitttrlttuttmt for availability and ttpet*leatltma. N Package 10 sec 300°C
Input Voltage SO Package Vapor Phase (60 sec.) 21tPC
AH5009/AH5010/AH5011/AH5012 30V Infrared (15 sec.) 220°C
Positive Analog Signal Voltage 30V Power Dissipation 500 mW
Negative Analog Signal Voltage --15V Operating Temperature Range -25% to + 85'C
Diode Current 10 mA Storage Temperature Range -65''C to + 150°C
Electrical Characteristics AH5010 and AH5012 (Notes 2 and 3)
Symbol Parameter Condltlons Typ Max Units
IGSX Input Current "OFF" 4.5V g Van s 1 IV, vso = 0.7V 0.01 0.2 nA
TA = 85% 1 0 nA
Itotorr, Leakage Current "OFF" Var-- 0.7V, vas = 3.8V 0.02 0.2 nA
TA = 85°C 1 0 M
IG(ON) Leakage Current "ON" VGD = OV, ls= 1 mA 0.08 1 nA
TA = 85''C 200 nA
IG(ON) Leakage Current "ON" VGD = ov, Is-- 2 mA 0.13 5 nA
TA--85''C 10 “A
|G(ON) Leakage Current "ON" Var--- ov, Is-- -2 mA 0.1 10 nA
TA = 85°C 20 p.A
TDS(ON) Drain-Source Resistance VGs = 0.35V, Is = 2 mA 90 150 n
TA == + 85°C 240 n
VDIODE Forward Diode Drop ID= 0.5 mA 0.8 V
rpsz) Match vas = 0V, ID == 1 mA 4 20 n
TON Turn "ON" Time See AC Test Circuit 150 500 ns
TOFF Turn "OFF" Time See AC Test Circuit 300 500 ns
CT Cross Talk See AC Test Circuit 120 dB
Electrical Characteristics AH5009 and AH5011 (Notes 2 and 3)
Symbol Parameter Conditions Typ Max Unlts
'GSX Input Current "OFF" 11VSVGDS15V, VSD=0.7V 0.01 0.2 nA
TA=85°C 10 nA
'D(OFF) Leakage Current "OFF" VSD = 0.7V, vas =10.3V 0.01 0.2 nA
TA = 85'C 10 nA
'G(0N) Leakage Current "ON" VGD= 0V, IS = 1 mA 0.04 0.5 nA
a-- 85°C 100 nA
'G(ON) Leakage Current "ON" VGD == 0V, IS = 2 mA 2 nA
TA=--85''C 1 11A
IG(ON) Leakage Current "ON" VGD = 0V, Is = - 2 mA 5 nA
TA = 85°C 2 p.A
"DS(0N) Drain-Source Resistance VGS = 1 .5V, Is = 2 mA 60 100 n
TA = 85''C 1 60 n
VDIODE Forward Diode Drop ID = 0.5 mA 0.8 V
rDs(oN) Match VGS = ov, ID = 1 mA 2 10 n
TON Turn "ON" Time See AC Test Circuit 150 50 ns
TOFF Turn "OFF" Time See AC Test Circuit 300 500 ns
CT Cross Talk See AC Test Circuit.f = 100 Hz. 120 dB
Not. 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating
the device beyond in specified operating conditions.
Not. 2: Test conditions 25°C unless otherwise noted.
Not. 3: "OFF" and "ON" notation refers to the conduction state of the FET switch.
Note 4: Thermal Resistance:
N14A, N16A 92'0/w
M14A, M18A 115°C/w
Test Circuits and Switching Time Waveforms
Cross Talk Test Circult
+5V ttt +15V
Tlmo Wavotorms
+5V or HEV
Ac Tent Clrcult
It-ttttl '19:.ng a m m N
Wm, trim
VOUY VA I tl UV
' th $10 9F) 1096
VIN (BUT) - 'tom --P tom
0 av -
- Vour
" = -10V
---- torrt - Now
TL/H/5859-2
ZI-OSHV/ l lOSHV/OLOSHV/GOOSHV
AH5009/AH5010/AH5011/AH5012
Typical Performance Characteristics
" RESISTANCE (fl)
DRAIN BURKE!" (MA)
DRAIN "OI
GATE LEAKAGE CURRENT (IA) "0N" RESISTANCE, rm. ((1)
DRAII CURRENT (MA)
Draln-Gate Voltage
Parameter Interactlon
vane", "os " -IW, I, " -t "
"s9ks'-tntAHtas"01t
. -tstt, Va; = try 'UlSED
" 5 " I00
V3; GATE SOURCE CUTDFF VOlTAGE M
"ON" Resistance, r950")
m vs Temperature
h, I -l m:
" " " " " " "
TEMPERATURE (°C)
Leakage Current vs
T, . we
h, " "I mA
II " tit " "
ORAlN-GATE VOLTAGE M
Drain Current vs Bias
5 Voltage
Ili-itil
T .tir'T
II 1.0 " "
GATE SOURCE VOLYAGE M
(”I'm“) aawmnaunasuvm
CROSS TALK. ET (I!) LEAKAGE CURRENT, lam” (IA)
TRAISCOIUUC’TAICE (mm)
l“. — IOMALIZED RESISTAICE
Leakage Current, |D(OFF)
vs Temperature
" " " " " " "
TEWERATURE t't2
Cross Talk, CT vs Frequency
" - tmt
m " Ill Inn in
FREQUENCY ON
Trantteondutttantttt "
Draln Current
n . tft;
v.0 . -w
-1.0 40
DRAIN CURRENT (MA)
Normalized Drain
no Resistance " Blas Voltage
Vega") . MW, MNA
- Ilia
II " " " " "
NetsNasorrp- uonmuzsn GATE.
~80 R EV!!! YAGE
" tt t L M TL/Hf5659-3
Applications Information
Theory of Operatlon
The AH series of analog switches are primarily intended for
operation in current mode switch applications; is., the
drains of the FET switch are held at or near ground by oper-
ating into the summing iunction of an operational amplifier.
Limiting the drain voltage to under a few hundred millivolts
eliminates the need for a special gate driver, allowing the
switches to be driven directly by standard TTL (AH5010),
5V-10V CMOS (AH5010), open collector 15V TTL/CMOS
(AH5009).
Two basic switch configurations are available: 4 indepen-
dent switches (SPST) and 4 pole switches used for multi-
plexing (4 PST-MUX). The MUX versions such as the
AH5009 offer common drains and Include a series FET op-
erated at Veg: 0V. The additional FET is placed in the
feedback path in order to compensate for the "ON" resist-
ance of the switch FET as shown in Figure f.
The closed-loop gain of Figure t is:
= R2 + I'Dsgomoz
R1 +’DS(ON)Q1
For R1 = R2, gain accuracy is determined by the rps(0N)
match between 01 and Q2. Typical match between Q1 and
02 is 4 ohms resulting in a gain accuracy of 0.05% (for RI
= R2 = 10 kn).
Nolse immunity
The switches with the source diodes grounded exhibit im-
proved noise immunity for positive analog signals in the
SERIES
ELEMENT
‘ANALOG ll
"OFF" state. With V|N=15V and the VA=10V, the source
of OI is clamped to about 0.7V by the diode (VGS=14.3V)
ensuring that ac signals imposed on the 10V input will not
gate the FET "ON."
Selectlon of Galn Setting Resistors
Since the AH series of analog switches are operated in cur-
rent mode, it is generally advisable to make the signal cur-
rent as large as possible. However, current through the FET
switch tends to forward bias the source to gate junction and
the signal shunting diode resulting in leakage through these
junctions. As shown in Figure a kuoto represents a finite
error in the current reaching the summing junction of the op
Secondly, the rosz) of the FET begins to "round" as Is
approaches loss- A practical rule of thumb is to maintain Is
at less than 1/10 of loss-
Combining the criteria from the above discussion yields:
V g MI A
R1min 2 A M D
FIGURE 1. Use of Compensation FET
ls! iii'
VA . HOV
l'etom
|G(ON)
te 1'-AiL8hN (2b)
loss/ 10
whichever is larger.
COMPENSATION
h, " Is - imam
TL/H/5659-4
FIGURE 2. On Leakage Current, lam")
ZLOSHV/ |- lOSHV/OLOSHV/BOOSHV
AH5009/AH5010/AH5011/AH5012
Applications Information (Continued)
Where: VMMAX) = Peak amplitude of the analog
input signal
AD = Desired accuracy
'G(ON) = Leakage at a given Is
IDSS =Saturation current of the FET
switch
'arf, 20 mA
in a typical application, VA might = i1ov, AD=0.1%,
o''CegTAs:85'C. The criterion of equation (2b) predicts:
---5kft
For R1 == 5k, Is a 10V/5k or 2 mA. The electrical charac-
teristics guarantee an IG(0N) S 1pA at 85'C for the AH5010.
Per the criterion of equation (2a):
(10V)i1o--3)
1 x 1 o - 6
Since equation (2a) predicts a higher value, the 10k resistor
should be used.
Tho "OFF" condition of the FET also affects gain accuracy.
As shown in Figure 3, the leakage across 02, |D(OFF) repre-
sents a finite error in the current arriving at the summing
junction of the op amp.
mwl""120 mA)
R1(MIN)2 210kft
Accordingly:
RUM SVA(MIN)AD
(N) 'D(OFF)
Where: VA(MIN) = Minimum value of the analog
input signal
AD = Desired accuracy
N = Number of channels
Imopp) = "OFF" leakage of a given FET
switch
As an example, if N = 10, AD == 0.1%. and ID(0FF) 310 nA
at 85°C for the AH5009. mm“) is:
( vm o ) 2 10k
(10)(10x10-9)
Selection of R2, of course, depends on the gain desired and
for unity gain R1 = R2.
Lastly, the foregoing discussion has ignored resistor toler-
ances, input bias current and offset voltage of the op amp--
all of which should be considered in setting the overall gain
accuracy of the circuit.
TTL Compatibility
The AH series can be driven with two different logic voltage
swings: the even numbered part types are specified to be
driven from standard 5V TTL logic and the odd numbered
types from 15V open collector TTL.
R1(MAX)S
I = v.
s - -f ID 215 + iotom
AT tlt
"OH" I
m 02 'tttM
"'orr"
VIN " 5V
TL/H/ 5659-5
FIGURE 3
Applications Information (Continued)
Standard TTL gates pull-up to about 3.5V (no load). In order
to ensure turn-off of the even numbered switches such as
AH5010, a pull-up resistor, REXT, of at least 10 kn should
be placed between the 5V Vcc and the gate output as
shown in Figure 4.
Likewise, the open-collector, high voltage TTL outputs
should use a pull-up resistor as shown in Figure 5. In
both cases, t(oFF) is improved for lower values of REXT at
the expense of power dissipation in the low state.
Definition of Terms
The terms referred to in the electrical characteristics tables
are as defined in Figure 6.
ANALOG
r""''""'"""'-'"""'"-""-''"-] Hilt
5V TTL GATE
INPUT (VA)
ANALOG
OUTPUT
FIGURE 4. lnterfaclng with + 5V TTL
+5V OR +15V
15V TTL GATE
ANALOG
INPUT (VA)
ANALOG
OUTPUT
TL/ H/ 5659 -6
FIGURE 5. Interfacing wlth + 15V Open Collector TTL
ZIOSHV/ l LOSHV/OlOSHV/GOOSHV
AH5009/AH5010/AH5011/AH5012
Applications Information (Continued)
Boston) COMPENSATING
ELEMENT
SERIES
ELEMENT i
FIGURE 6. Deflnltlon of Terms
Typical Applications
De-Glltched Swltch for Nolseless Audlo Swltchlng
RC TYPICALLY
(1 mt-IO ms)
SIGNAL
1/4 AH5012
Jr''' q;" ttf
LF351 OUT
TL/H/5659-7
Typical Applications (Continued)
3-Channel Multiplexer wlth Sample and Hold
ANALOG
mum L_L
L __._.__
t2 , " , tMIUtACTEtWTttlt; TVPICALOUTPUT
vonAn: cam
=" h___v___a
cmumu “mm"
smnsmom sum
B-Blt Binary (BCD) Multlplylng D/A Converter'
tux C" - 1
"o""'vv7f3f I
zsu I' I
-1. I _ F1ll8CALEhltJilrmEaT
I " l CI "
m I - r-c----' 1.
1 - s "
l'; (Hg)
I mm L..
took I' +
L.-ePLu
I , i I " 'Recommended resistor array connection for D/A application
GO '1:
s (no ran um)
um C" - - - - "l
I - - l
zoal tmiotTltm
___-2%
2 Beckman resistor arrays
Part *698-1,R 100k B recommended
R,ilm, + Wu + Gila + Giu +
Efi.y.+55-lr-lrile
16 16 16 16
L - £502 - J Note: The switch is "ON" when G is at 0V (Logic "o")
TL/H/5859-6
ZI-OSHV/ l IOSHV/OLOSHV/GOOSHV
AH5009/AH5010/AH5011/AH5012
Typical Applications (Continued) ltr-Channel Mums“,
l I CHARACTERISTICS: ERROR---th4HV TYPICAL e 25'tt
I " w I 10w TYPICAL a Ttrtt
Em" I I Note: The analog switch between me op amp and the " input
I " I switches reduces the errors due to leakage.
I - " J
All resistors are 10k. TL/H/5659-9
Typical Applications (Continued)
Galn Programmable Amplifier
0-1 1,,:htr--
BAIN " Leer
TL/H/5659-10
Zl-OSHV/L lOSHV/OLOSHV/GOOSHV
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
National Semiconductor was acquired by Texas Instruments.
corp/docs/irwestor_relations/Pr_09_23_201 1_national_semiconductor.html
This file is the datasheet for the following electronic components:
AH5009CM - product/ah50090m?HQS=TI-nu||-nu|I-dscataIog-df-pf-null-wwe
AH5009CN - product/ah50090n?HQS=T|-nu|I-null-dscatalog-df—pf—nuIl-wwe
AH5010CM - product/ah5010cm?HQS=TI-nu|I—nu|I-dscataIog-df-pf-null-wwe
AH501OCN - product/ah5010cn?HQS=T|—nul|—nulI-dscatalog-df—pf—nuIl-wwe
AH5011CM - product/ah5011cm?HQS=TI-nu||-nu|I-dscataIog-df-pf-null-wwe
AH5011CN - product/ah5011cn?HQS=T|-nu|I-null-dscatalog-df—pf—nuIl-wwe
AH5012CM - product/ah5012cm?HQS=TI-nu|I—nu|I-dscataIog-df-pf-null-wwe
AH5012CN - product/ah5012cn?HQS=T|—nul|—nulI-dscatalog-df—pf—nuIl-wwe
