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ADN2847ACP-32-RL7 |ADN2847ACP32RL7ADN/a633avai3 V Dual-Loop 50 Mbps to 3.3 Gbps Laser Diode Driver


ADN2847ACP-32-RL7 ,3 V Dual-Loop 50 Mbps to 3.3 Gbps Laser Diode DriverSPECIFICATIONSParameter Min Typ Max Unit Conditions/CommentsLASER BIAS (BIAS)Output Current I 2 100 ..
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ADN2847ACP-32-RL7
3 V Dual-Loop 50 Mbps to 3.3 Gbps Laser Diode Driver
REV.0
3V Dual-Loop 50 Mbps to 3.3 Gbps
Laser Diode Driver
FEATURES
50 Mbps to 3.3 Gbps Operation
Single 3.3V Operation
Typical Rise/Fall Time 80 ps
Bias Current Range 2 mA to 100 mA
Modulation Current Range 5 mA to 80 mA
Monitor Photodiode Current 50 �A to 1200
�A
Dual MPD Functionality for DWDMmA Supply Current at 3.3V
Closed-Loop Control of Power and Extinction Ratio
Full Current Parameter Monitoring
Laser Fail and Laser Degrade Alarms
Automatic Laser Shutdown, ALS
Optional Clocked Data
Supports FEC Rates
48-Lead (7 mm � 7 mm) LFCSP Package
32-Lead (5 mm � 5 mm) LFCSP Package
Available in Die Form
APPLICATIONS
SONET OC-1/3/12/48
SDH STM-0/1/4/16
Fibre Channel
Gigabit Ethernet
DWDM Dual MPD Wavelength Control
GENERAL DESCRIPTION

The ADN2847 uses a unique control algorithm to control both
average power and extinction ratio of the laser diode, LD, after
initial factory setup. External component count and PCB area are
low as both power and extinction ratio control are fully integrated.
Programmable alarms are provided for laser fail (end of life) and
laser degrade (impending fail).
Optional dual MPD current monitoring is designed into the
ADN2847 specifically for DWDM wavelength control.
FUNCTIONAL BLOCK DIAGRAM
ADN2847–SPECIFICATIONS
MODULATION CURRENT (IMODP, IMODN)CC = 3.0 V to 3.6 V. All specifications TMIN to TMAX, unless
otherwise noted.1 Typical values as specified at 25�C.)
ADN2847
NOTESTemperature range: –40∞C to +85∞C.The high speed performance for the die version of ADN2847 can be achieved when using the bonding diagram shown in Figure 3.Measured into a 25 W load using a 11110000 pattern at 2.5 Gbps.When the voltage on DATAP is greater than the voltage on DATAN, the modulation current flows in the IMODP pin.Guaranteed by design and characterization. Not production tested.IDTONE may cause eye distortion.ICCMIN for power calculation on page 8 is the typical ICC given.All VCC pins should be shorted together.
Specifications subject to change without notice.
ABSOLUTE MAXIMUM RATINGS1

(TA = 25∞C, unless otherwise noted.)
VCC to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.2 V
Digital Inputs (ALS, LBWSET, CLKSEL) . .–0.3 V to VCC + 0.3 V
IMODN, IMODP . . . . . . . . . . . . . . . . . . . . . . . . .VCC + 1.2 V
Operating Temperature Range
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . .–40∞C to +85∞C
Storage Temperature Range . . . . . . . . . . . . .–65∞C to +150∞C
Junction Temperature (TJ max) . . . . . . . . . . . . . . . . . . .150∞C
48-Lead LFCSP Package
Power Dissipation2 . . . . . . . . . . . . . . . .(TJ max – TA)/qJA WqJA Thermal Impedance3 . . . . . . . . . . . . . . . . . . . . .25∞C/W
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . .300∞C
32-Lead LFCSP Package
Power Dissipation2 . . . . . . . . . . . . . . . .(TJ max – TA)/qJA WqJA Thermal Impedance3 . . . . . . . . . . . . . . . . . . . . .32∞C/W
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . .300∞C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.Power consumption formulae are provided on page 8.qJA is defined when part is soldered on a 4-layer board.
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
ADN2847 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model

ADN2847ACP-32
ADN2847ACP-48
ADN2847ACP-32-RL
ADN2847ACP-32-RL7
ADN2847ACP-48-RL
Figure 1.Setup and Hold Time
ADN2847
Figure 3.Bonding Diagram
GND2
VCC2
IMODN
IMODN
GND2
IMODP
IMODP
GND2
GND2
IBIAS
IBIAS
CCBIAS
GND
CLKN
CLKP
GND1
DATAP
DATAN
GND1
VCC1
GND
PAVCAP
ERCAP
2280

2620�m
GND
GND
VCC4IMPD2IMPDMON
LBWSET
ERSET
GND2
VCC3GNDCLKSEL
FAIL
GND2
IMMON

Figure 2.Metallization Photograph
*With the origin in the center of the die (see Figure 2).
DIE PAD COORDINATES*
PIN CONFIGURATION
32-Lead LFCSP
PIN 1
INDICATOR
ADN2847
TOP VIEW
LBWSET 1
ASET 2
ERSET 3
PSET 4
IMPD 5
IMPDMON 6
GND4 7
VCC4 8
24 IBMON
23 IMMON
22 GND3
21 VCC3
20 ALS
19 FAIL
18 DEGRADE
17 CLKSEL
ERCAP 9
PAVCAP 10
1 1
DATAN 12
DATAP 13
GND1 14CLKP 15CLKN 16
32 CCBIAS31 I
BIAS
30 GND229 GND228 IMODP27 GND226 IMODN25 V
48-Lead LFCSP
PIN 1
INDICATOR
ADN2847
TOP VIEW
TP1 1
LBWSET 2
ASET 3
ERSET 4
PSET 5
TP2 6
IMPD 7
IMPDMON 8
IMPDMON2 9
IMPD2 10
GND4 11
VCC4 12
36 GND2
35 IDTONE
34 GND2
33 IBMON
32 IMMON
31 GND3
30 VCC3
29 ALS
28 FAIL
27 DEGRADE
26 CLKSEL
25 TP6
48 CCBIAS47 I
BIAS
46 I
BIAS
45 GND244 GND243 IMODP42 IMODP41 GND240 IMODN39 IMODN38 V
37 GND2
ERCAP 13
PAVCAP 14
TP3 15
1 1
GND1 17
DATAN 18DATAP 19
GND1 20
CLKP 21
CLKN 22
TP4 23TP5 24
PIN FUNCTION DESCRIPTIONS
ADN2847
Figure 4.Rise Time Distribution Under Worst-
Case Operating Conditions
Figure 5.Fall Time Distribution Under Worst-
Case Operating Conditions
GENERAL

Laser diodes have current-in to light-out transfer functions as
shown in Figure 6. Two key characteristics of this transfer function
are the threshold current, ITH, and slope in the linear region
beyond the threshold current, referred to as slope efficiency, LI.
ER =
ITHCURRENT
PAV
OPTICAL PO
WER

Figure 6.Laser Transfer Function
Control

A monitor photodiode, MPD, is required to control the LD.
The MPD current is fed into the ADN2847 to control the power
and extinction ratio, continuously adjusting the bias current and
modulation current in response to the laser’s changing threshold
current and light-to-current slope efficiency.
The ADN2847 uses automatic power control, APC, to maintain
a constant average power over time and temperature.
The ADN2847 uses closed-loop extinction ratio control to allow
optimum setting of extinction ratio for every device. Thus
SONET/SDH interface standards can be met over device
variation, temperature, and laser aging. Closed-loop modulation
control eliminates the need to either overmodulate the LD or
include external components for temperature compensation.
This reduces researchanddevelopment time and second
sourcing issues caused by characterizing LDs.
Average power and extinction ratio are set using the PSET and
PIN FUNCTION DESCRIPTIONS (continued)

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