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ADN2820ACHIPS
10.7 Gbps Low Noise, High Gain Transimpedance Amplifier IC with Performance Monitor
10.7 Gbps, 3.3 V, Low Noise,
TIA with Average Power Monitor
Rev. 0
FEATURES
Technology: high performance SiGe
Bandwidth: 9 GHz
Input noise current density: 1.0 µA
Optical sensitivity: –19.3 dBm
Differential transimpedance: 5000 V/A
Power dissipation: 200 mW
Input current overload: 2.8 mA p-p
Linear input range: 0.15 mA p-p
Output resistance: 50 Ω/side
Output offset adjustment range: 240 mV
Average input power monitor: 1 V/mA
Die size: 0.87 mm × 1.06 mm
APPLICATIONS
10.7 Gbps optical modules
SONET/SDH OC-192/STM-64 and 10 GbE
receivers, transceivers, and transponders
PRODUCT DESCRIPTION The ADN2820 is a compact, high performance, 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
10 Gbps Metro-Access and Ethernet systems. It is a single chip
solution for detecting photodiode current with a differential
output voltage. The ADN2820 features low input referred noise
current and high output transimpedance gain, capable of
driving a typical CDR or transceiver directly. A POWMON
output is provided for input average power monitoring and
alarm generation. Low nominal output offset enables dc output
coupling to 3.3 V circuits. The OFFSET control input enables
output slice level adjustment for asymmetric input signals. The
ADN2820 operates with a 3.3 V power supply and is available in
die form.
FUNCTIONAL BLOCK DIAGRAM
3.3V
CLF
POWMON (8)
OUT (5)
OUTB (6)
OFFSET (14)03194-0-001
Figure 1. Functional Block Diagram/Typical Operating Circuit
TABLE OF CONTENTS Specifications.....................................................................................3
Absolute Maximum Ratings............................................................4
ESD Caution..................................................................................4
Pad Layout and Functional Descriptions......................................5
Pad Layout.....................................................................................5
Die Information............................................................................5
Pad Descriptions...........................................................................5
Pad Coordinates...........................................................................5
Typical Performance Characteristics.............................................6
Applications........................................................................................8
Optical Sensitivity.........................................................................8
Optical Power Monitor.................................................................8
Output Offset Adjust Input..........................................................9
Low Frequency Transimpedance Cutoff Capacitor Selection.9
Bandwidth versus Input Bond Wire Inductance....................10
Bandwidth versus Output Bond Wire Inductance.................10
Butterfly Package Assembly......................................................11
Outline Dimensions.......................................................................12
Ordering Guide..........................................................................12
REVISION HISTORY Revision 0: Initial Version
SPECIFICATIONS
Table 1. Electrical Specifications 1 Min/Max VCC = 3.3 V ± 0.3 V, TAMBIENT = –15°C to +85°C; Typ VCC = 3.3 V, TAMBIENT = 25°C.
2 Photodiode capacitance CD = 0.22 pF ± 0.04 pF; photodiode resistance = 20 Ω; CB = CF = 100 pF; RF = 100 Ω; input wire bond inductance LIN = 0.5 nH ± 0.15 nH; output
bond wire inductance LOUT, OUTB = 0.85 nH ± 0.15 nH; load impedance = 50 Ω (each output, dc- or ac-coupled).
3 10–12 BER, 8 dB extinction ratio, 0.85 A/W PIN responsivity.
ABSOLUTE MAXIMUM RATINGS
Table 2. ADN2820 Absolute Maximum Ratings Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
this product features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
PAD LAYOUT AND FUNCTIONAL DESCRIPTIONS
PAD LAYOUT DIE INFORMATION 03194-0-002
Figure 2. ADN2820 Pad Layout
Die Size 0.875 mm × 1.060 mm
Die Thickness 12 mils = 0.3 mm
Passivation Openings 0.08 mm × 0.08 mm
0.12 mm × 0.08 mm
0.08 mm × 0.12 mm
Passivation Composition 5000 Å Si3N4 (Top)
+5000 Å SiO2 (Bottom)
Pad Composition Al/1% Cu
Backside Contact P-Type Handle (Oxide Isolated from Active Circuitry)
PAD DESCRIPTIONS
Table 3. Pad Descriptions
PAD COORDINATES
Table 4. Pad Coordinates
TYPICAL PERFORMANCE CHARACTERISTICS
OUT
DIFFE
NTIAL (V
OFFSET CONTROL INPUT (V)0.30.60.91.21.51.82.12.42.73.03.303194-0-008
Figure 3. VOUT Differential vs. OFFSET Adjust
POWM
(V
IIN (µA)11001k10k03194-0-009
Figure 4. VPOWMON vs. IIN
START .050 000 000GHzSTOP 20.000 000 000GHzS21LOG5dB/REF 0dB2:11.571dB8.156 326 057GHz|s22| (
FREQUENCY (GHz)
0.010.11
03194-0-011
Figure 6. Differential S22 vs. Frequency
DIFFERENTIAL OUTPUT VOLTAGE (mV p-p)
INPUT CURRENT (mA p-p)03194-0-012
Figure 7. Output Voltage vs. Input Current
GAIN (
INPUT CURRENT (mA p-p)03194-0-013
Figure 8. Transimpedance Gain vs. Input Current
