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ADM483EANADIN/a878avai+-15 kV ESD Protected, EMC Compliant Slew Rate Limited, EIA RS-485 Transceiver
ADM483EARADN/a894avai+-15 kV ESD Protected, EMC Compliant Slew Rate Limited, EIA RS-485 Transceiver


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ADM483EAN-ADM483EAR
+-15 kV ESD Protected, EMC Compliant Slew Rate Limited, EIA RS-485 Transceiver
REV.0
615 kV ESD Protected, EMC Compliant
Slew Rate Limited, EIA RS-485 Transceiver
FUNCTIONAL BLOCK DIAGRAMFEATURES
Robust RS-485 Transceiver
15 kV ESD Protection Using HBM
2 kV EFT Protection Meets IEC1000-4-4
High EM Immunity Meets IEC1000-4-3
Reduced Slew Rate for Low EM Interference
250 kbps Data Rate
Single +5 V 6 10% Supply
–7 V to +12 V Bus Common-Mode Range
12 kV Input Impedance
Short Circuit Protection
Excellent Noise Immunity
36 mA Supply Current
0.1 mA Shutdown Current
APPLICATIONS
Low Power RS-485 Systems
Electrically Harsh Environments
EMI Sensitive Applications
DTE-DCE Interface
Packet Switching
Local Area Networks
GENERAL DESCRIPTION

The ADM483E is a robust, low power differential line trans-
ceiver suitable for communication on multipoint bus transmis-
sion lines. Internal protection against electrostatic discharge
(ESD), electrical fast transient (EFT) and electromagnetic
immunity (EMI) allows operation in electrically harsh environ-
ments. ESD protection on the I-O lines meets ±15 kV when
tested using the Human Body Model. EFT protection meets2 kV in accordance with IEC1000-4-4, while EMI immunity is
in excess of 10 V/m meeting IEC1000-4-3.
The level of unwanted emissions is also carefully controlled
using slew limiting on the driver outputs. This reduces reflec-
tions with improperly terminated cables and also minimizes
electromagnetic interference. The controlled slew rate limits the
data rate to 250 kbps.
The ADM483E is intended for balanced data transmission and
complies with both EIA Standards RS-485 and RS-422. It
contains a differential line driver and a differential line receiver
and is suitable for half duplex data transmission, as the driver
and receiver share the same differential pins.
The input impedance on the ADM483E is 12 kΩ, allowing up
to 32 transceivers on the bus.
The ADM483E operates from a single +5 V ± 10% power sup-
ply. Excessive power dissipation caused by bus contention or by
output shorting is prevented by a thermal shutdown circuit. This
feature forces the driver output into a high impedance state if,
during fault conditions, a significant temperature increase is
detected in the internal driver circuitry.
The receiver contains a fail-safe feature that results in a logic
high output state if the inputs are unconnected (floating).
The ADM483E is fabricated on BiCMOS, an advanced mixed
technology process combining low power CMOS with robust
bipolar technology.
It is fully specified over the industrial temperature range and is
available in 8-lead DIP and SOIC packages.
ADM483E–SPECIFICATIONS
Specifications subject to change without notice.
TIMING SPECIFICATIONS
(VCC = +5 V 6 10%. All specifications TMIN to TMAX unless otherwise noted)
(VCC = +5 V 6 10%. All specifications TMIN to TMAX unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS*
(TA = +25°C unless otherwise noted)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7 V
Inputs
Driver Input (DI) . . . . . . . . . . . . . . . .–0.5 V to VCC + 0.5 V
Control Inputs (DE, RE) . . . . . . . . . . –0.5 V to VCC + 0.5 V
Receiver Inputs (A, B) . . . . . . . . . . . . . . . . . –14 V to +14 V
Outputs
Driver Outputs . . . . . . . . . . . . . . . . . . . . –12.5 V to +12.5 V
Receiver Output . . . . . . . . . . . . . . . . . –0.5 V to VCC +0.5 V
ESD Rating: Air (Human Body Model) (A, B Pins) . . ±15 kV
ESD Rating: Contact (Human Body Model)
(A, B Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8 kV
ESD Rating MIL-STD-883B Method 3015
(Except A, B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.5 kV
EFT Rating (IEC1000-4-4) (A, B Pins) . . . . . . . . . . . . ±2 kV
EMI Immunity (IEC1000-4-3) . . . . . . . . . . . . . . . . . . 10 V/m
Power Dissipation 8-Pin DIP . . . . . . . . . . . . . . . . . . . 727 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . +135°C/W
Power Dissipation 8-Pin SOIC . . . . . . . . . . . . . . . . . 470 mW
θJA, Thermal Impedance . . . . . . . . . . . . . . . . . . +110°C/W
Operating Temperature Range
Industrial (A Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
*Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum ratings for extended periods may affect device reliability.
ORDERING GUIDE
PIN FUNCTION DESCRIPTION
PIN CONFIGURATION
Table I.Selection Table
ADM483E
Figure 1.Driver Voltage Measurement Test Circuit
Figure 2.Driver Voltage Measurement Test Circuit 2S2
VCC
0V OR 3V
DE IN

Figure 3.Driver Enable/Disable Test Circuit
VCC
RE IN
+15V
–15V

Figure 4.Receiver Enable/Disable Test Circuit
Test Circuits
–VO
1/2VO
1.5V1.5V
TSKEW
90% POINT
10% POINT
90% POINT
TPHL
TSKEWTF

Figure 6.Driver Propagation Delay, Rise/Fall Timing0V
A–B
VOL
VOH
Switching Characteristics

Figure 5.Receiver Propagation Delay Test Circuit
Figure 7.Driver Enable/Disable Timing
OUTPUT VOLTAGE – Volts0.52.51.01.52.0
OUTPUT CURRENT – mA

Figure 11.Receiver Output Low
Voltage vs. Output Current
OUTPUT VOLTAGE – Volts0.55.01.01.52.02.53.03.54.04.5
OUTPUT CURRENT – mA
–30

Figure 14.Driver Output High
Voltage vs. Output Current
10dB/DIV
500kHz/DIV05MHz

Figure 17.Driver Output Waveform
and FFT Plot Transmitting @ 150 kHz
OUTPUT VOLTAGE – Volts
OUTPUT CURRENT – mA

Figure 12.Receiver Output High
Voltage vs. Output Current
OUTPUT VOLTAGE – Volts00.54.51.01.52.03.03.54.02.5
OUTPUT CURRENT – mA

Figure 15.Driver Differential Output
Voltage vs. Output Current200
FREQUENCY – MHz
dBµV

Figure 18.Radiated Emissions
Figure 13.Driver Output Low
Voltage vs. Output Current
Figure 16.ADM483E Driving
4000 ft. of Cable
LOG FREQUENCY (0.15–30) – MHz
LIMIT
dBµV

Figure 19.Conducted Emissions
ADM483E
GENERAL INFORMATION

The ADM483E is a ruggedized RS-485 transceiver that operates
from a single +5 V supply.
It contains protection against radiated and conducted interfer-
ence, including high levels of electrostatic discharge.
It is ideally suited for operation in electrically harsh environ-
ments or where cables may be plugged/unplugged. It is also
immune to high RF field strengths without special shielding
precautions. It is intended for balanced data transmission and
complies with both EIA Standards RS-485 and RS-422. It con-
tains a differential line driver and a differential line receiver, and
is suitable for half duplex data transmission as the driver and
receiver share the same differential pins.
The input impedance on the ADM483E is 12 kΩ, allowing up to
32 transceivers on the differential bus.
The ADM483E operates from a single +5 V ± 10% power
supply. Excessive power dissipation caused by bus contention or
by output shorting is prevented by a thermal shutdown circuit.
This feature forces the driver output into a high impedance state
if, during fault conditions, a significant temperature increase is
detected in the internal driver circuitry.
The receiver contains a fail-safe feature that results in a logic
high output state if the inputs are unconnected (floating).
A high level of robustness is achieved using internal protection
circuitry, eliminating the need for external protection compo-
nents such as tranzorbs or surge suppressors.
Low electromagnetic emissions are achieved using slew limited
drivers, minimizing interference both conducted and radiated.
The ADM483 can transmit at data rates up to 250 kbps.
A typical application for the ADM483E is illustrated in Figure
20. This shows a half-duplex link where data may be transferred
at rates up to 250 kbps. A terminating resistor is shown at both
ends of the link. This termination is not critical since the slew
rate is controlled by the ADM483E and reflections are minimized.
The communications network may be extended to include
multipoint connections as shown in Figure 30. Up to 32
transceivers may be connected to the bus.
RS485/RS-422 LINK
+5V+5V
0.1µF

Figure 20.Typical Half-Duplex Link Application
Tables II and III show the truth tables for transmitting and
receiving.
Table II.Transmitting Truth Table
InputsOutputs

X = Don’t Care.
Table III.Receiving Truth Table
InputsOutputs

X = Don’t Care.
ESD/EFT TRANSIENT PROTECTION SCHEME

The ADM483E uses protective clamping structures on its
inputs and outputs that clamp the voltage to a safe level and
dissipates the energy present in ESD (Electrostatic) and EFT
(Electrical Fast Transients) discharges.
The protection structure achieves ESD protection up to ±15 kV
according to the Human Body Model, and EFT protection up
to ±2 kV on all I-O lines.
ESD TESTING

Two coupling methods are used for ESD testing, contact
discharge and air-gap discharge. Contact discharge calls for a
direct connection to the unit being tested. Air-gap discharge
uses a higher test voltage but does not make direct contact with
the unit under test. With air discharge, the discharge gun is
moved toward the unit under test, developing an arc across the
air gap, hence the term air-discharge. This method is influenced
by humidity, temperature, barometric pressure, distance and
rate of closure of the discharge gun. The contact-discharge
method, while less realistic, is more repeatable and is gaining
acceptance and preference over the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time, coupled with high voltages, can
cause failures in unprotected semiconductors. Catastrophic
destruction can occur immediately as a result of arcing or
heating. Even if catastrophic failure does not occur immedi-
ately, the device may suffer from parametric degradation, which
may result in degraded performance. The cumulative effects of
continuous exposure can eventually lead to complete failure.
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