ADG849YKSZ-500RL7 ,3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70GENERAL DESCRIPTION 1. Very low on-resistance, 0.5 Ω ty pical. The ADG849 is a monolithic, CMOS SPD ..
ADG849YKSZ-REEL7 ,3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70SPECIFICATIONS 1Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V–40°C to –40°C to Parameter +25°C +85°C +12 ..
ADG884BCBZ-500RL7 ,DUAL 2:1 MUX/SPDT AUDIO SWITCHapplications. Logic (IN1/IN2) Switch 1A/2A Switch 1B/2B When on, each switch conducts equally well ..
ADG884BCBZ-REEL ,DUAL 2:1 MUX/SPDT AUDIO SWITCHapplications that require minimal distortion 3. 1.8 V logic-compatible. through the switch. The ADG ..
ADG884BCBZ-REEL7 ,DUAL 2:1 MUX/SPDT AUDIO SWITCHSPECIFICATIONS 1VDD = 5 V ± 10%, GND = 0 V, unless otherwise noted.Table 2. Parameter 25°C −40°C to ..
ADG884BCPZ-REEL ,0.5 Ω CMOS Dual 2:1 MUX/SPDT Audio SwitchSPECIFICATIONS 1VDD = 5 V ± 10%, GND = 0 V, unless otherwise noted.Table 2. Parameter 25°C −40°C t ..
AGN20003 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN20012 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200A03 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
AGN200A03 , High Sensitivity, with 100mW nominal operating power, in a compact and space saving case
ADG849YKSZ-500RL7-ADG849YKSZ-REEL7
3 V/5 V CMOS 0.5 Ω SPDT Switch in SC70
3 V/5 V CMOS
0.5 Ω SPDT/2:1 Mux in SC70
Rev. 0
FEATURES
Ultralow on-resistance:
0.5 Ω typical
0.8 Ω maximum at 5 V supply
Excellent audio performance, ultralow distortion:
0.13 Ω typical
0.24 Ω maximum RON flatness
High current carrying capability:
400 mA continuous current
600 mA peak current at 5 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
Pin-compatible upgrade for the ADG749 and ADG779
APPLICATIONS
Cellular phones
PDAs
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
FUNCTIONAL BLOCK DIAGRAM FOR A LOGIC 1 INPUT04737-0-001
Figure 1.
GENERAL DESCRIPTION The ADG849 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to 5.5 V.
It is designed to offer ultralow on-resistance values of typically
0.5 Ω. This design makes the ADG849 an ideal solution for
applications that require minimal distortion through the switch.
The ADG849 also has the capability of carrying large amounts
of current, typically 600 mA at 5 V operation.
Each switch of the ADG849 conducts equally well in both
directions when on. The device exhibits break-before-make
switching action, thus preventing momentary shorting when
switching channels.
The ADG849 is available in a tiny, 6-lead SC70 package, making
it the ideal candidate for space-constrained applications.
PRODUCT HIGHLIGHTS 1. Very low on-resistance, 0.5 Ω typical.
2. Tiny, 6-lead SC70 package.
3. Low power dissipation. The CMOS construction ensures
low power dissipation.
4. High current carrying capability.
5. Low THD + noise (0.01% typ).
TABLE OF CONTENTS Specifications.....................................................................................3
Absolute Maximum Ratings............................................................5
ESD Caution..................................................................................5
Pin Configuration and Function Descriptions.............................6
Typical Performance Characteristics..............................................7
Test Circuits........................................................................................9
Outline Dimensions.......................................................................11
Ordering Guide..........................................................................11
REVISION HISTORY
7/04—Revision 0: Initial Version SPECIFICATIONS
Table 1. VDD = 4.5 V to 5.5 V, GND = 0 V1 The temperature range for the Y version is –40°C to +125°C.
2 Guaranteed by design, not subject to production test.
Table 2. VDD = 2.7 V to 3.6 V, GND = 0 V1 1The temperature range for the Y version is –40°C to +125°C. Guaranteed by design, not subject to production test.
ABSOLUTE MAXIMUM RATINGS
Table 3. TA = 25°C, unless otherwise noted Overvoltages at IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
Table 4. Truth Table Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VDD
GND04737-0-002
Figure 2. Pin Configuration
Table 5. Terminology
