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ADG839YKSZ-500RL7-ADG839YKSZ-REEL7
0.35 Ω CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX
0.35 Ω CMOS 1.65 V to 3.6 V
Single SPDT Switch/2:1 MUX
Rev. 0
FEATURES
1.65 V to 3.6 V operation
Ultralow on resistance:
0.35 Ω typical
0.5 Ω max at 2.7 V supply
Excellent audio performance, ultralow distortion:
0.055 Ω typical
0.09 Ω max RON flatness
High current carrying capability:
300 mA continuous
500 mA peak current at 3.3 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
FUNCTIONAL BLOCK DIAGRAM SWITCHES SHOWNFOR A LOGIC 1 INPUT
Figure 1.
APPLICATIONS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
PRODUCT HIGHLIGHTS 1. 0.6 Ω over full temperature range of –40°C to +125°C.
2. Compatible with 1.8 V CMOS logic.
3. High current handling capability (300 mA continuous
current at 3.3 V).
4. Low THD + N (0.01% typ).
5. Tiny SC70 package.
GENERAL DESCRIPTION The ADG839 is a low voltage CMOS device containing a single-
pole, double-throw (SPDT) switch. This device offers ultralow
on resistance of less than 0.6 Ω over the full temperature range.
The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply
operation.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG839 exhibits break-before-make switching action.
The ADG839 is available in a 6-lead SC70 package.
Table 1. ADG839 Truth Table TABLE OF CONTENTS Specifications—2.7 V to 3.6 V........................................................3
Specifications—2.3 V to 2.7 V........................................................4
Specifications—1.65 V to 1.95 V....................................................5
Absolute Maximum Ratings............................................................6
ESD Caution..................................................................................6
Pin Configuration and Function Descriptions.............................7
Typical Performance Characteristics..............................................8
Terminology....................................................................................11
Test Circuits.....................................................................................12
Outline Dimensions.......................................................................14
Ordering Guide..........................................................................14
REVISION HISTORY
10/04—Initial Version: Revision 0
SPECIFICATIONS1—2.7 V TO 3.6 VVDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2. Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
SPECIFICATIONS1—2.3 V TO 2.7 V
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.
Temperature range for the Y version is −40°C to +125°C.
2 Guaranteed by design; not subject to production test.
SPECIFICATIONS1—1.65 V TO 1.95 V
VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
Table 4.
1 Temperature range for the Y version is −40°C to +125°C. Guaranteed by design; not subject to production test.
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
___________________
1 Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VDD
GND
04449-002
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
For more information, refer to the Terminology section.
TYPICAL PERFORMANCE CHARACTERISTICS
0.0500.51.01.52.02.53.03.5
VD, VS(V)
ON RE
ANCEFigure 3. On Resistance vs. VD (VS) VDD = 3 V to 3.6 V
0.0500.51.01.52.02.5VD, VS(V)
ON RE
ANCE
Figure 4. On Resistance vs. VD (VS) VDD = 2.5 V ± 0.2 V
0.102.01.81.61.41.21.00.80.60.40.2VD, VS(V)
ON RE
ANCE
Figure 5. On Resistance vs. VD (VS) VDD = 1.8 V ± 0.15 V
0.0503.02.52.01.51.00.5VD, VS(V)
ON RE
ANCE
Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V
0.102.52.01.51.00.5VD, VS(V)
ON RE
ANCE
Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 2.5 V
0.101.81.61.41.21.00.80.60.40.2VD, VS(V)
ON RE
ANCE
Figure 8. On Resistance vs. VD (VS) for Different Temperature, VDD = 1.8 V
