ADG819BRM ,0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT SwitchesGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG819 and the ADG820 are monolithic, CMOS, SPDT1. Very l ..
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ADG819BRM
0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches
REV.0
0.5 � CMOS
1.8 V to 5.5 V 2:1 Mux/SPDT Switches
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Low On Resistance 0.8 � Max at 125�C
0.25 � Max On Resistance Flatness
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40�C to +125�C
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead �SOIC Package, and
6-Bump MicroCSP (Micro Chip Scale Package) ADG819
Fast Switching Times
Typical Power Consumption (<0.01 �W)
TTL-/CMOS-Compatible Inputs
Pin Compatible with the ADG719 (ADG819)
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
GENERAL DESCRIPTIONThe ADG819 and the ADG820 are monolithic, CMOS, SPDT
(single-pole, double-throw) switches. These switches are designed
on a submicron process that provides low power dissipation yet
gives high switching speed, low On resistance, and low leakage
currents.
Low power consumption and an operating supply range of 1.8V
to 5.5V make the ADG819 and ADG820 ideal for battery-pow-
ered, portable instruments.
Each switch of the ADG819 and the ADG820 conducts equally
well in both directions when on. The ADG819 exhibits break-
before-make switching action, thus preventing momentary shorting
when switching channels. The ADG820 exhibits make-before-
break action.
The ADG819 and the ADG820 are available in a 6-lead SOT-23
package and an 8-lead µSOIC package. The ADG819 is also
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP
package. This chip occupies only a 1.14 mm × 2.18 mm area,
making it the ideal candidate for space-constrained applications.
PRODUCT HIGHLIGHTSVery low ON resistance, 0.5 Ω typical1.8 V to 5.5 V single-supply operationHigh current carrying capabilityTiny 6-lead SOT-23 package, 8-lead µSOIC package,
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package
(ADG819 only)
ADG819/ADG820–SPECIFICATIONS1(VDD = 5 V � 10%, GND = 0 V.)ANALOG SWITCH
DYNAMIC CHARACTERISTICS
NOTES
1Temperature range is as follows: –40°C to +125°C.
2ON resistance parameters tested with IS = 10 mA.
3Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG819/ADG820
SPECIFICATIONS1
(VDD = 2.7 V to 3.6 V, GND = 0 V.)NOTESTemperature range is as follows: –40°C to +125°C.ON resistance parameters tested with IS = 10 mA.
ADG819/ADG820
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C, unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog Inputs2 . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Digital Inputs2 . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 400 mA
. . . . . . . . . . . . . . . .(Pulsed at 1 ms, 10% Duty Cycle Max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . 200 mA
Operating Temperature Range
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Automotive . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +125°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
µSOIC Package
�JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
�JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44°C/W
SOT-23 Package (4-Layer Board)
�JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 119°C/W
MicroCSP Package
�JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . TBD
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C
IR Reflow, Peak Temperature (<20 sec) . . . . . . . . . . . 235°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I.Truth Table for the ADG819/ADG820
PIN CONFIGURATIONS
6-Lead SOT-23
(RT-6)
8-Lead µSOIC
(RM-8)
2 � 3 MicroCSP
ADG819 ONLY
TOP VIEW
(BUMPS AT THE BOTTOM)
NOT TO SCALE
ORDERING GUIDENOTESBranding on these packages is limited to three characters due to space constraints.Contact factory for availability.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily accumulate
on the human body and test equipment and can discharge without detection. Although the ADG819/
ADG820 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
TERMINOLOGY
ADG819/ADG820
–Typical Performance CharacteristicsTPC 1.ON Resistance vs. VD (VS)
TPC 2.ON Resistance vs. VD (VS)
TPC 3.Leakage Currents vs. Temperatures
TPC 4.ON Resistance vs. VD (VS) for Different Temperatures
TPC 5.ON Resistance vs. VD (VS) for Different Temperatures
TPC 6.tON/tOFF Times vs. Temperature (ADG819)
