ADG801BRM specifications –40°C to +125°C unless otherwise noted.)DD SS o o–40 C to –40 C too o oParameter ..
ADG802BRT specifications –40°C to +125°C unless otherwise noted.)DD SS o o–40 C to –40 C too o oParameter ..
ADG813YRU ,0.5 CMOS 1.65 V to 3.6 V Quad SPST SwitchesGENERAL DESCRIPTION The ADG811, ADG812, and ADG813 are low voltage CMOS 1. <0.8 Ω o ver full temper ..
ADG819BRM ,0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT SwitchesGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG819 and the ADG820 are monolithic, CMOS, SPDT1. Very l ..
ADG819BRT-REEL7 , 0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch
ADG819BRT-REEL7 , 0.5 ohm, CMOS, 1.8V to 5.5V, 2:1 Mux/SPDT Switch
AG603-89G , InGaP HBT Gain Block
AG603-89G , InGaP HBT Gain Block
AG604-89 , InGaP HBT Gain Block
AG604-89G , InGaP HBT Gain Block
AG8888N , CALL WAITING DECODER
AG8889N , CALL WAITING DECODER
ADG801BRM-ADG802BRT
REV.PrE Jan ‘02
PRELIMINARY TECHNICAL DATA
<0.5 ΩΩΩΩΩ
CMOS, Low Voltage, SPST Switches
FEATURES
Low On Resistance < 0.5 ΩΩΩΩΩ max at 5 V supply
0.1 ΩΩΩΩΩ On Resistance Flatness
+1.8 V to +5.5 V Single Supply
100pA Leakage Currents
14ns Switching Times
Extended Temperature Range -40oC to +125oC
High Current Carrying Capability
Tiny 6 lead SOT23 and 8 Lead μμμμμSOIC Packages
Low Power Consumption
TTL/CMOS Compatible Inputs
Pin Compatible with ADG701/ADG702
APPLICATIONS
Power Routing
Audio and Video Signal Routing
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Data Acquisition Systems
Communication Systems
Relay replacement
Audio and Video Switching
Battery Powered Systems
GENERAL DESCRIPTIONThe ADG801/ADG802 are monolithic CMOS SPST (Single
Pole, Single Throw) switches with On Resistance of less than
0.5Ω. These switches are designed on an advanced submicron
process that provides extremely low on resistance, high switch-
ing speed and low leakage currents.
The low On Resistance of <0.5Ω means these parts are ideal
for applications where low on resistance switching is critical.
The ADG801 is a normally open (NO) switch, while the
ADG802 is normally closed (NC). Each switch conducts
equally well in both directions when ON.
The ADG801 and ADG802 are available in 6-lead SOT-23
and 8 Lead μSOIC packages.
PRODUCT HIGHLIGHTSLow On Resistance (0.25 Ω typical).+1.8V to +5.5V Single Supply Operation.Tiny 6 Lead SOT23 and 8 Lead μSOIC Packages.Pin Compatible with ADG701 (ADG801)
Pin Compatible with ADG702 (ADG802).
FUNCTIONAL BLOCK DIAGRAMS
ADG801/ADG802–SPECIFICATIONS1
PRELIMINARY TECHNICAL DATA
(VDD = 5 V ±10%, VSS = GND = 0 V. All specifications –40°C to +125°C unless otherwise noted.)NOTESTemperature ranges are as follows: Extended Temperature Range: –40°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG801/ADG802
PRELIMINARY TECHNICAL DATANOTESTemperature ranges are as follows: Extended Temperature Range: –40°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
1
ADG801/ADG802
PRELIMINARY TECHNICAL DATA
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
ABSOLUTE MAXIMUM RATINGS1
(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
Analog Inputs2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to VDD +0.3 V
. . . . . . . . . . . . . . . . . . . .or 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . .400 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . .800 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Extended . . . . . . . . . . . . . . . . . . . . . . .–40°C to +125°C
Storage Temperature Range . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . .+150°C
µSOIC Package, Power Dissipation . . . . . . . . . . .315 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . .206°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . .44°C/W
SOT-23 Package, Power Dissipation . . . . . . . . . .282 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . .229.6°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . .91.99°C/W
Lead Temperature, Soldering (10seconds) . . . . . . .300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . .+220°C
ESD.....................................................................2kV
ORDERING GUIDEBranding on SOT-23 and μSOIC packages is limited to 3 characters due to space constraints.
NOTESStresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above
those listed in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods
may affect device reliability. Only one absolute maximum rating may
be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table I.Truth Table
PIN CONFIGURATIONS
6-Lead Plastic Surface Mount (SOT-23)
(RT-6)
8-Lead Small Outline μμμμμSOIC
(RM-8)
PRELIMINARY TECHNICAL DATA
TERMINOLOGY
IDD
GND
VD (VS)
RON
RFLAT(ON)
IS (OFF)
ID (OFF)
ID, IS (ON)
VINH
IINL(IINH)
CD (OFF)
CD,CS(ON)
tON
tOFF
ADG801/ADG802
PRELIMINARY TECHNICAL DATA
Figure 1. On Resistance as a Function
of VD(VS)
Figure 2. On Resistance as a Function
of VD(VS) for Different Temperatures
Figure 3. On Resistance as a Function
of VD(VS) for Different Temperatures
Figure 4. Leakage Currents as a func-
tion of VD(VS)
Figure 5. Leakage Currents as a func-
tion of VD(VS)
Figure 6. Leakage Currents as a func-
tion of Temperature
Figure 7. Leakage Currents as a
Function of Temperature
Figure 8. Supply Currents vs. Input
Switching Frequency
Figure 9. Charge Injection vs. Source
Voltage
TYPICAL PERFORMANCE CHARACTERISTICS
