ADG788BCP ,2.5ohm, 1.8V to 5.5V, +-2.5 V Triple/Quad SPDT Switches in Chip Scale Packagesapplications. All channels exhibit break-before-make switch-ing action preventing momentary shortin ..
ADG788BCPZ-REEL7 , 2.5ohm, 1.8V to 5.5V, 2.5V, -2.5V Triple/Quad SPDT Switches in Chip Scale Packages
ADG790BCBZ-REEL , Low Voltage, CMOS Multimedia Switch
ADG790BCBZ-REEL , Low Voltage, CMOS Multimedia Switch
ADG791GBCPZ-500RL7 , IC-Compatible, Wide Bandwidth, Quad, 2:1 Multiplexer
ADG794BRQZ ,Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video SwitchCharacteristics .8 Single Supply 3 Typical Application ........8 Absolute Maximum Ratings...... 5 ..
AG503-86 , InGaP HBT Gain Block
AG503-89 , InGaP HBT Gain Block Product Information
AG503-89G , InGaP HBT Gain Block Product Information
AG603 , InGaP HBT Gain Block
AG603-89G , InGaP HBT Gain Block
AG603-89G , InGaP HBT Gain Block
ADG788BCP
2.5ohm, 1.8V to 5.5V, +-2.5 V Triple/Quad SPDT Switches in Chip Scale Packages
REV.0
2.5 �, 1.8 V to 5.5 V, �2.5 V Triple/Quad
SPDT Switches in Chip Scale Packages
FEATURES
1.8 V to 5.5 V Single Supply�2.5 V Dual Supply
2.5 � On Resistance
0.5 � On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG786
Quad SPDT: ADG788
20-Lead 4 mm � 4 mm Chip Scale Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs
For Functionally-Equivalent Devices in 16-Lead TSSOP
Packages, See ADG733/ADG734
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
GENERAL DESCRIPTIONThe ADG786 and ADG788 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.
Low power consumption and operating supply range of 1.8 V to
5.5 V and dual ±2.5 V make the ADG786 and ADG788 ideal
for battery powered, portable instruments and many other
applications. All channels exhibit break-before-make switch-
ing action preventing momentary shorting when switching
channels. An EN input on the ADG786 is used to enable or
disable the device. When disabled, all channels are switched OFF.
These multiplexers are designed on an enhanced submicron
process that provides low power dissipation yet gives high switch-
ing speed, very low on resistance, high signal bandwidths and
low leakage currents. On resistance is in the region of a few
ohms, is closely matched between switches and very flat over
the full signal range. These parts can operate equally well in
either direction and have an input signal range which extends to
the supplies.
The ADG786 and ADG788 are available in small 20-lead
chip scale packages.
PRODUCT HIGHLIGHTSSmall 20-Lead 4 mm × 4 mm Chip Scale Packages (CSP).Single/Dual Supply Operation. The ADG786 and ADG788
are fully specified and guaranteed with 3 V ± 10% and
5 V ± 10% single supply rails, and ±2.5 V ± 10% dual
supply rails.Low On Resistance (2.5Ω typical).Low Power Consumption (<0.01 μW).Guaranteed Break-Before-Make Switching Action.
FUNCTIONAL BLOCK DIAGRAMS
ADG786/ADG788–SPECIFICATIONS1POWER REQUIREMENTS
NOTESTemperature range is as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V � 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
ADG786/ADG788
SPECIFICATIONS1NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 3 V � 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
ADG786/ADG788–SPECIFICATIONS1
DUAL SUPPLYNOTESTemperature range is as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +2.5 V � 10%, VSS = –2.5 V � 10%, GND = 0 V, unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –3.5 V
Analog Inputs2 . . . . . . . . . . . . . . VSS – 0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Digital Inputs2 . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
Industrial (A, B Versions) . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
20 Lead CSP, θJA Thermal Impedance . . . . . . . . . . .32°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . 220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at A, EN, IN, S, or D will be clamped by internal diodes. Current
should be limited to the maximum ratings given.
PIN CONFIGURATIONS
NC = NO CONNECT
EXPOSED PAD TIED TO SUBSTRATE, VSS
TOP VIEW
(Not to Scale)
PIN 1
IDENTIFIERS2A
S3B
S3A
S1B
S1A
ADG786
S2BNCNCNC
GNDA1A0TOP VIEW
(Not to Scale)
PIN 1
IDENTIFIERD1
S1B
VSS
GND
S2B
S4B
VDD
S3B
S3A
ADG788
S1AIN1IN4S4AD4
S2A
IN2IN3
ORDERING GUIDE
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG786/ADG788 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
ADG786/ADG788
Table I.ADG786 Truth Table
Table II. ADG788 Truth TableVSS
IDD
ISS
GND
VD (VS)
ΔRON
RFLAT(ON)
IS (OFF)
VINH
IINL(IINH)
CIN
tON
tOFF
tON(EN)
Charge
Off Isolation
Crosstalk
On Response
TERMINOLOGY
