ADG779BKS ,CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 PackageGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG779 is a monolithic CMOS SPDT (single-pole,1. Tiny 6-Le ..
ADG779BKS-REEL ,CMOS, Low Voltage 2.5 Ohms SPDT Switch / 2:1 MuxGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG779 is a monolithic CMOS SPDT (single-pole,1. Tiny 6-Le ..
ADG781 ,CMOS, Low Voltage 2.5 Ohm Quad SPST Switches in Chip Scale PackageGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG781, ADG782, and ADG783 are monolithic CMOS 1. 20-Lead ..
ADG781BCP ,2.5 ohm Quad SPST Switches in Chip Scale PackageGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG781, ADG782, and ADG783 are monolithic CMOS 1. 20-Lead ..
ADG788BCP ,2.5ohm, 1.8V to 5.5V, +-2.5 V Triple/Quad SPDT Switches in Chip Scale Packagesapplications. All channels exhibit break-before-make switch-ing action preventing momentary shortin ..
ADG788BCPZ-REEL7 , 2.5ohm, 1.8V to 5.5V, 2.5V, -2.5V Triple/Quad SPDT Switches in Chip Scale Packages
AG402-86 , InGaP HBT Gain Block
AG402-89G , AG402-89 InGaP HBT Gain Block
AG402-89G , AG402-89 InGaP HBT Gain Block
AG403-86 , InGaP HBT Gain Block
AG503-86 , InGaP HBT Gain Block
AG503-89 , InGaP HBT Gain Block Product Information
ADG779BKS
CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package
REV.0
CMOS 1.8 V to 5.5 V, 2.5 �
SPDT Switch/2:1 Mux In Tiny SC70 Package
FUNCTIONAL BLOCK DIAGRAM
FEATURES
1.8 V to 5.5 V Single Supply
2.5 � On Resistance
0.75 � On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SC70 Package
Fast Switching Times
tON20 ns
tOFF6 ns
Typical Power Consumption (<0.01 �W)
TTL/CMOS-Compatible
APPLICATIONS
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTIONThe ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submi-
cron process that provides low power dissipation yet gives
high switching speed, low on resistance and low leakage
currents.
The ADG779 operates from a single supply range of 1.8V
to 5.5V, making it ideal for use in battery-powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTSTiny 6-Lead SC70 Package.1.8V to 5.5 V Single Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3V and 5 V supply rails.Very Low RON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8V
operation, RON is typically 40Ω over the temperature range.On-Resistance Flatness (RFLAT(ON)) (0.75 Ω typ).–3 dB Bandwidth >200 MHz.Low Power Dissipation. CMOS construction ensures low
power dissipation.14 ns Switching Times.
ADG779–SPECIFICATIONS1ANALOG SWITCH
DIGITAL INPUTS
NOTES
1Temperature ranges are as follows:B Version, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V � 10%, GND = 0 V)
ADG779LEAKAGE CURRENTS
DIGITAL INPUTS
NOTESTemperature ranges are as follows: B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 3 V � 10%, GND = 0 V)SPECIFICATIONS1
ADG779
ORDERING GUIDE*Brand = Brand on these packages is limited to three characters due to space constraints.
PIN CONFIGURATION
6-Lead SC70
Table I.Truth Table
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG779 features proprietary ESD protection circuitry, permanent damage may
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
Analog, Digital Inputs2 . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
SC70 Package, Power Dissipation . . . . . . . . . . . . . . . .315 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .332°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . .120°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . .215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
TPC 1.On Resistance as a Function of VD (VS) Single
Supplies
TPC 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
TPC 3.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
TPC 4.Leakage Currents as a Function of Temperature
TPC 5.Leakage Currents as a Function of Temperature
TPC 6.Supply Current vs. Input Switching Frequency
ADG779TPC 7.Off Isolation vs. Frequency
TPC 8.Crosstalk vs. Frequency
TPC 9.On Response vs. Frequency
