ADG774BR. ,CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Muxspecifications T to T unless otherwise noted.)DD MIN MAX B Version toTMINParameter +258CT Un ..
ADG774BRQ ,CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 MuxFEATURESFUNCTIONAL BLOCK DIAGRAMLow Insertion Loss and On Resistance: 4 V TypicalOn-Resistance Flat ..
ADG779BKS ,CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 PackageGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG779 is a monolithic CMOS SPDT (single-pole,1. Tiny 6-Le ..
ADG779BKS-REEL ,CMOS, Low Voltage 2.5 Ohms SPDT Switch / 2:1 MuxGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG779 is a monolithic CMOS SPDT (single-pole,1. Tiny 6-Le ..
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AG302-86G , InGaP HBT Gain Block
AG303-86 , InGaP HBT Gain Block
AG402-86 , InGaP HBT Gain Block
AG402-89G , AG402-89 InGaP HBT Gain Block
AG402-89G , AG402-89 InGaP HBT Gain Block
AG403-86 , InGaP HBT Gain Block
ADG774BR-ADG774BR.-ADG774BRQ
CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux
REV.0
CMOS
3 V/5 V, Wide Bandwidth Quad 2:1 Mux
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Low Insertion Loss and On Resistance: 4 V Typical
On-Resistance Flatness <2 V
Bandwidth >200 MHz
Single 3 V/5 V Supply Operation
Rail-to-Rail Operation
Very Low Distortion: <1%
Low Quiescent Supply Current (100 nA Typical)
Fast Switching Times
tON 10 ns
tOFF 4 ns
TTL/CMOS Compatible
APPLICATIONS
10/100 Base-TX/T4
100VG-AnyLAN
Token Ring 4 Mbps/16 Mbps
ATM25/155
NIC Adapter and Hubs
Audio and Video Switching
Relay Replacement
GENERAL DESCRIPTIONThe ADG774 is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance
variation is typically less than 0.5W with an input signal ranging
from 0V to 5V.
The bandwidth of the ADG774 is greater than 200MHz and
this, coupled with low distortion (typically 0.5%), makes the
part suitable for switching fast ethernet signals.
The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when switch-
ing audio signals. Fast switching speed, coupled with high signal
bandwidth, also makes the parts suitable for video signal switch-
ing. CMOS construction ensures ultralow power dissipation
making the parts ideally suited for portable and battery powered
instruments.
The ADG774 operates from a single 3.3V/5V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
These switches conduct equally well in both directions when ON,
and have an input signal range that extends to the supplies. In
the OFF condition, signal levels up to the supplies are blocked.
The ADG774 switches exhibit break-before-make switching
action.
PRODUCT HIGHLIGHTSWide bandwidth data rates >200 MHz.Ultralow Power Dissipation.Extended Signal Range.
The ADG774 is fabricated on a CMOS process giving an
increased signal range that fully extends to the supply rails.Low leakage over temperature.Break-Before-Make Switching.
This prevents channel shorting when the switches are config-
ured as a multiplexer.Crosstalk is typically –70 dB @ 30 MHz.Off isolation is typically –60 dB @ 10 MHz.
ADG774–SPECIFICATIONSANALOG SWITCH
POWER REQUIREMENTS
NOTESTemperature ranges are as follows:B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)SINGLE SUPPLY
ADG774ANALOG SWITCH
POWER REQUIREMENTS
NOTESTemperature ranges are as follows:B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +3 V 6 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)SINGLE SUPPLY
Table I.Truth Table
ADG774
ORDERING GUIDE
PIN CONFIGURATION
(SOIC/QSOP)
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG774 features proprietary ESD protection circuitry, permanent damage may
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . .100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .600 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .100°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
QSOP Package, Power Dissipation . . . . . . . . . . . . . . .566 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . .149.97°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGYGND
RON
IS (OFF)
ID (OFF)
ID, IS (ON)
VD (VS)
CS (OFF)
tOFF
Crosstalk
Off Isolation
Bandwidth
VS OR VD DRAIN OR SOURCE VOLTAGE – V
–
4.0 Figure 1.On Resistance as a Function of VD (VS) for
Various Single Supplies
–
VS OR VO DRAIN OR SOURCE VOLTAGE – V
1.32.53.74.9Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures with 5 V Single Supplies
–
VS OR VD DRAIN OR SOURCE VOLTAGE – V
0.61.11.62.12.6Figure 3.On Resistance as a Function of VD (VS) for
Different Temperatures with 3 V Single Supplies
Figure 4.On Response vs. Frequency
Figure 5.Off Isolation vs. Frequency
Figure 6.Crosstalk vs. Frequency
ADG774
SOURCE VOLTAGE – V
CHARGE INJECTION – pCFigure 7.Charge Injection vs. Source Voltage
10 BASE TX+
10 BASE TX–
100 BASE TX+
100 BASE TX–
10 BASE TX+
10 BASE TX–
100 BASE TX+
100 BASE TX–
10 BASE TX
100 BASE TXFigure 8.Full Duplex Transceiver
Figure 11.Line Clamp
120VFigure 10.Line Termination
Figure 9.Loop Back
