ADG774ABRQ ,Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Timespecifications T to T unless otherwise noted.)DD MIN MAX B VersionT toMINParameter 25CT Uni ..
ADG774ABRQZ-REEL , Low Voltage, 400 MHz, Quad 2:1 Mux with 3 ns Switching Time
ADG774BR ,CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Muxspecifications T to T unless otherwise noted.)DD MIN MAX B Version toTMINParameter +258CT Un ..
ADG774BR. ,CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Muxspecifications T to T unless otherwise noted.)DD MIN MAX B Version toTMINParameter +258CT Un ..
ADG774BRQ ,CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 MuxFEATURESFUNCTIONAL BLOCK DIAGRAMLow Insertion Loss and On Resistance: 4 V TypicalOn-Resistance Flat ..
ADG779BKS ,CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 PackageGENERAL DESCRIPTIONPRODUCT HIGHLIGHTSThe ADG779 is a monolithic CMOS SPDT (single-pole,1. Tiny 6-Le ..
AG201-86 , InGaP HBT Gain Block
AG201-86 , InGaP HBT Gain Block
AG302-86G , InGaP HBT Gain Block
AG303-86 , InGaP HBT Gain Block
AG402-86 , InGaP HBT Gain Block
AG402-89G , AG402-89 InGaP HBT Gain Block
ADG774ABRQ
Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time
REV.0
Low Voltage 400 MHz Quad 2:1 Mux
with 3 ns Switching Time
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Bandwidth >400 MHz
Low Insertion Loss and On Resistance: 2.2 � Typical
On-Resistance Flatness 0.3 � Typical
Single 3 V/5 V Supply Operation
Very Low Distortion: <0.3%
Low Quiescent Supply Current (1 nA Typical)
Fast Switching Times
tON 6 ns
tOFF 3 ns
TTL/CMOS Compatible
GENERAL DESCRIPTIONThe ADG774A is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance
variation is typically less than 0.5Ω over the input signal range.
The bandwidth of the ADG774A is typically 400MHz and this,
coupled with low distortion (typically 0.3%), makes the part
suitable for switching of high-speed data signals.
The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion. CMOS con-
struction ensures ultralow power dissipation.
The ADG774A operates from a single 3.3V/5V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
These switches conduct equally well in both directions when
ON. In the OFF condition, signal levels up to the supplies are
blocked. The ADG774A switches exhibit break-before-make
switching action.
PRODUCT HIGHLIGHTSWide bandwidth data rates >400 MHz.Ultralow Power Dissipation.Low leakage over temperature.Break-Before-Make Switching.
This prevents channel shorting when the switches are config-
ured as a multiplexer.Crosstalk is typically –70 dB @ 10 MHz.Off isolation is typically –65 dB @ 10 MHz.
ADG774A–SPECIFICATIONSANALOG SWITCH
NOTESTemperature ranges are as follows:B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V � 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)SINGLE SUPPLY1
ADG774ANOTES
1Temperature ranges are as follows:B Version, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 3 V � 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)SINGLE SUPPLY1
Table I.Truth Table
ADG774A
ORDERING GUIDE
PIN CONFIGURATION
(QSOP)
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG774A features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
. . . . . . . . . . . . . . . . . . . . . . .30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
QSOP Package, Power Dissipation . . . . . . . . . . . . . . 566 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . 149.97°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
TPC 1.On Resistance as a Function
of VD (VS) for Various Single Supplies
TPC 4.On Resistance as a Function
of VD (VS) for Different Temperatures
with 3 V Single Supplies
TEMPERATURE – C
CURRENT
nA
–0.05TPC 7.Leakage Current as a Function
of Temperature
TPC 2.On Resistance as a Function
of VD (VS) for Various Single Supplies
TPC 5.Leakage Current as a
Function of VD (VS)
TPC 8.Leakage Current as a
Function of Temperature
VS OR VD OR DRAIN SOURCE VOLTAGE – V012345TPC 3.On Resistance as a Function
of VD (VS) for Different Temperatures
with 5 V Single Supplies
TPC 6.Leakage Current as a
Function of VD (VS)
TPC 9.Off Isolation vs. Frequency
ADG774AFigure 1.Full Duplex Transceiver
Figure 4.Line Clamp
Figure 3.Line Termination
Figure 2.Loop Back
TPC 10.Crosstalk vs. Frequency
TPC 11.Bandwidth
TPC 12.Charge Injection vs. Source
Voltage
