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ADG751ARM-ADG751BRM
CMOS, Low Voltage RF/Video, SPST Switch
REV. 0
CMOS, Low Voltage
RF/Video, SPST Switch
FUNCTIONAL BLOCK DIAGRAM
FEATURES
High Off Isolation –75 dB at 100 MHz
–3 dB Signal Bandwidth 300 MHz
+1.8 V to +5.5 V Single Supply
Low On-Resistance (15 V)
Fast Switching Times
tON Typically 9 ns
tOFF Typically 3 ns
Typical Power Consumption <0.01 mW
TTL/CMOS Compatible
APPLICATIONS
Audio and Video Switching
RF Switching
Networking Applications
Battery Powered Systems
Communication Systems
Relay Replacement
Sample-and-Hold Systems
GENERAL DESCRIPTIONThe ADG751 is a low voltage SPST (single pole, single throw)
switch. It is constructed in a T-switch configuration, which
results in excellent Off Isolation while maintaining good fre-
quency response in the ON condition.
High off isolation and wide signal bandwidth make this part
suitable for switching RF and video signals. Low power con-
sumption and operating supply range of +1.8 V to +5.5 V make
it ideal for battery powered, portable instruments.
The ADG751 is designed on a submicron process that provides
low power dissipation yet gives high switching speed and low on
resistance. This part is a fully bidirectional switch and can handle
signals up to and including the supply rails.
The ADG751 is available in 6-lead SOT-23 and 8-lead mSOIC
packages.
PRODUCT HIGHLIGHTSHigh Off Isolation –75 dB at 100 MHz.–3 dB Signal Bandwidth 300 MHz.Low On-Resistance (15 W).Low Power Consumption, typically <0.01 mW.Tiny 6-lead SOT-23 and 8-lead mSOIC packages.
ADG751–SPECIFICATIONS(VDD = +5 V 6 10%, GND = 0 V, unless otherwise noted.)NOTESGuaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG751SPECIFICATIONSNOTESGuaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +3 V 6 10%, GND = 0 V, unless otherwise noted.)
ADG751
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG751 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
Industrial (A, B Versions) . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature (TJ Max) . . . . . . . . . . . . . . . . . .+150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . (TJ Max–TA)/qJASOIC Package
qJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .206°C/W
qJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .44°C/W
SOT-23 Package
qJA Thermal Impedance . . . . . . . . . . . . . . . . . . . .229.6°C/W
qJC Thermal Impedance . . . . . . . . . . . . . . . . . . . .91.99°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE*Brand on these packages is limited to three characters due to space constraints.
TERMINOLOGY
Table I.Truth Table
PIN CONFIGURATIONS
8-Lead mSOIC
(RM-8)
NC = NO CONNECT
VDD
GND
6-Lead SOT-23
(RT-6)
NC = NO CONNECT
VDD
GND
ADG751
VD OR VS DRAIN SOURCE VOLTAGE – Volts01
– 45Figure 1.On Resistance as a Function of VD (VS) Single
Supplies (A Grade)
Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V (A Grade)
Figure 3.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V (A Grade)
Figure 4.On Resistance as a Function of VD (VS) Single
Supplies (B Grade)
Figure 5.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V (B Grade)
VD OR VS DRAIN SOURCE VOLTAGE – Volts
–
VDD = +5V
+1258C
1.04.03.0Figure 6.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V (B Grade)
–Typical Performance Characteristics
