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AG201-86 , InGaP HBT Gain Block
AG201-86 , InGaP HBT Gain Block
AG302-86G , InGaP HBT Gain Block
AG303-86 , InGaP HBT Gain Block
AG402-86 , InGaP HBT Gain Block
AG402-89G , AG402-89 InGaP HBT Gain Block
ADG733BRQ-ADG733BRU-ADG734BRU
CMOS, 2.5 ohm Low Voltage, Triple/Quad SPDT Switches
REV.0
CMOS, 2.5 � Low Voltage,riple/Quad SPDT Switches
FEATURES
1.8 V to 5.5 V Single Supply�3 V Dual Supply
2.5 � On Resistance
0.5 � On Resistance Flatness
100 pA Leakage Currents
19 ns Switching Times
Triple SPDT: ADG733
Quad SPDT: ADG734
Small TSSOP and QSOP Packages
Low Power Consumption
TTL/CMOS-Compatible Inputs
APPLICATIONS
Data Acquisition Systems
Communication Systems
Relay Replacement
Audio and Video Switching
Battery-Powered Systems
GENERAL DESCRIPTIONThe ADG733 and ADG734 are low voltage, CMOS devices
comprising three independently selectable SPDT (single pole,
double throw) switches and four independently selectable SPDT
switches respectively.
Low power consumption and operating supply range of 1.8 V to
5.5 V and dual ±3 V make the ADG733 and ADG734 ideal for
battery powered, portable instruments. All channels exhibit
break-before-make switching action preventing momentary
shorting when switching channels. An EN input on the ADG733
is used to enable or disable the device. When disabled, all chan-
nels are switched OFF.
These 2–1 multiplexers/SPDT switches are designed on an
enhanced submicron process that provides low power dissipation
yet gives high switching speed, very low on resistance, high signal
bandwidths and low leakage currents. On resistance is in the region
of a few ohms, is closely matched between switches and very flat
over the full signal range. These parts can operate equally well
in either direction and have an input signal range which extends
to the supplies.
The ADG733 is available in small TSSOP and QSOP packages,
while the ADG734 is available in a small TSSOP package.
PRODUCT HIGHLIGHTSSingle/Dual Supply Operation. The ADG733 and ADG734 are
fully specified and guaranteed with 3 V and 5 V single supply
rails and ±3 V dual supply rails.Low On Resistance (2.5Ω typical).Low Power Consumption (<0.01 µW).Guaranteed Break-Before-Make Switching Action.
FUNCTIONAL BLOCK DIAGRAMS
ADG733/ADG734–SPECIFICATIONS1NOTES
1Temperature range is as follows: B Version: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 5 V � 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)
ADG733/ADG734LEAKAGE CURRENTS
POWER REQUIREMENTS
NOTES
1Temperature ranges are as follows: B Version: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = 3 V � 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.)SPECIFICATIONS1
ADG733/ADG734–SPECIFICATIONS1
DUAL SUPPLYANALOG SWITCH
POWER REQUIREMENTS
NOTESTemperature range is as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +3 V � 10%, VSS = –3 V � 10%, GND = 0 V, unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –3.5 V
Analog Inputs2 . . . . . . . . . . . . . .VSS – 0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Digital Inputs2 . . . . . . . . . . . . . . . . .–0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
Industrial (A, B Versions) . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG733/ADG734 features proprietary ESD protection circuitry, permanent dam-
age may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
16-Lead TSSOP, θJA Thermal Impedance . . . . . . .150.4°C/W
20-Lead TSSOP, θJA Thermal Impedance . . . . . . . .143°C/W
16-Lead QSOP, θJA Thermal Impedance . . . . . . .149.97°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . .300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . .220°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
PIN CONFIGURATIONS
TSSOP/QSOP TSSOP
ADG733/ADG734
Table I.ADG733 Truth TableX = Don’t Care.
Table II. ADG734 Truth Table
TERMINOLOGY
