ADG721BRM ,CMOS Low Voltage 4 ohm Dual SPST Switchesspecifications –408C to +858C, unless otherwise noted.)DD B Version–408C toParameter +258C ..
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ADG722BRM ,CMOS Low Voltage 4 ohm Dual SPST SwitchesGENERAL DESCRIPTION1. +1.8 V to +5.5 V Single Supply Operation. The ADG721,The ADG721, ADG722 and A ..
ADG723BRM ,CMOS Low Voltage 4 ohm Dual SPST SwitchesCHARACTERISTICSt 16 ns typ R = 300 Ω, C = 35 pFON L L24 ns max V = 2 V, Test Circuit 4St 7 ns typ R ..
AFS600-FGG256 , Fusion Family of Mixed Signal FPGAs
AG201-86 , InGaP HBT Gain Block
AG201-86 , InGaP HBT Gain Block
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ADG721BRM-ADG722BRM-ADG723BRM
CMOS Low Voltage 4 ohm Dual SPST Switches
REV.0
CMOS
Low Voltage 4 V Dual SPST Switches
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
+1.8 V to +5.5 V Single Supply
4 V (Max) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
8-Lead mSOIC Package
Fast Switching Times
tON20 ns
tOFF10 ns
Low Power Consumption (<0.1 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTIONThe ADG721, ADG722 and ADG723 are monolithic CMOS
SPST switches. These switches are designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low On resistance and low leakage currents.
The ADG721, ADG722 and ADG723 are designed to operate
from a single +1.8 V to +5.5 V supply, making them ideal for
use in battery powered instruments and with the new generation
of DACs and ADCs from Analog Devices.
The ADG721, ADG722 and ADG723 contain two independent
single-pole/single-throw (SPST) switches. The ADG721 and
ADG722 differ only in that both switches are normally open and
normally closed respectively. While in the ADG723, Switch 1 is
normally open and Switch 2 is normally closed.
Each switch of the ADG721, ADG722 and ADG723 conducts
equally well in both directions when on. The ADG723 exhibits
break-before-make switching action.
PRODUCT HIGHLIGHTS+1.8 V to +5.5 V Single Supply Operation. The ADG721,
ADG722 and ADG723 offers high performance, including
low on resistance and fast switching times and is fully speci-
fied and guaranteed with +3 V and +5 V supply rails.Very Low RON (4 Ω max at 5 V, 10Ω max at 3 V). At 1.8 V
operation, RON is typically 40 Ω over the temperature range.Low On-Resistance Flatness.–3 dB Bandwidth >200 MHz.Low Power Dissipation. CMOS construction ensures low
power dissipation.Fast tON/tOFF.8-Lead μSOIC.
ADG721/ADG722/ADG723–SPECIFICATIONS1ANALOG SWITCH
DYNAMIC CHARACTERISTICS
NOTESTemperature ranges are as follows:B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, GND = 0 V. All specifications –408C to +858C, unless otherwise noted.)
ADG721/ADG722/ADG723
(VDD = +3 V 6 10%, GND = 0 V. All specifications –408C to +858C, unless otherwise noted.)SPECIFICATIONS1ANALOG SWITCH
LEAKAGE CURRENTS
DYNAMIC CHARACTERISTICS
NOTESTemperature ranges are as follows:B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG721/ADG722/ADG723
ORDERING GUIDE*Brand = Due to package size limitations, these three characters represent the part number.
PIN CONFIGURATION
8-Lead mSOIC (RM-8)
Table I.Truth Table (ADG721/ADG722)
Table II.Truth Table (ADG723)
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
μSOIC Package, Power Dissipation . . . . . . . . . . . . . . .450 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .206°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .44°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
Figure 1.On Resistance as a Function of VD (VS) Single
Supplies
Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = +3 V
VD OR VS – DRAIN OR SOURCE VOLTAGE – V0.5
–
4.5Figure 4.Supply Current vs. Input Switching Frequency
Figure 5.Off Isolation vs. Frequency
ADG721/ADG722/ADG723Figure 7.On Response vs. Frequency
Test Circuit 1.On Resistance
Test CircuitsTest Circuit 2.Off Leakage
Test Circuit 3.On Leakage
Test Circuit 4.Switching Times
