ADG719BRT ,CMOS Low Voltage 4 ohm SPDT SwitchCHARACTERISTICSt 14 ns typ R = 300 W , C = 35 pFON L L20 ns max V = 3 V, Test Circuit 4St 3 ns typ ..
ADG719BRT-500RL7 , CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23
ADG719BRT-REEL , CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23
ADG719BRTZ-500RL7 , CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23
ADG719BRTZ-REEL , CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23
ADG721BRM ,CMOS Low Voltage 4 ohm Dual SPST Switchesspecifications –408C to +858C, unless otherwise noted.)DD B Version–408C toParameter +258C ..
AFS600-FGG256 , Fusion Family of Mixed Signal FPGAs
AG201-86 , InGaP HBT Gain Block
AG201-86 , InGaP HBT Gain Block
AG302-86G , InGaP HBT Gain Block
AG303-86 , InGaP HBT Gain Block
AG402-86 , InGaP HBT Gain Block
ADG719BRM-ADG719BRT
CMOS Low Voltage 4 ohm SPDT Switch
REV.A
CMOS
Low Voltage 4 V SPDT Switch
FUNCTIONAL BLOCK DIAGRAM
SWITCHES SHOWN FOR A LOGIC "1" INPUT
FEATURES
+1.8 V to +5.5 V Single Supply
4 V (Max) On Resistance
0.75 V (Typ) On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead mSOIC Package
Fast Switching Times
tON20 ns
tOFF6 ns
Typical Power Consumption (<0.01 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTIONThe ADG719 is a monolithic CMOS SPDT switch. This switch
is designed on a submicron process that provides low power
dissipation yet gives high switching speed, low on resistance and
low leakage currents.
The ADG719 can operate from a single supply range of +1.8V
to +5.5V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices.
Each switch of the ADG719 conducts equally well in both di-
rections when on. The ADG719 exhibits break-before-make
switching action.
Because of the advanced submicron process, –3 dB bandwidths
of greater than 200 MHz can be achieved.
The ADG719 is available in a 6-lead SOT-23 package and an
8-lead mSOIC package.
PRODUCT HIGHLIGHTS+1.8V to +5.5 V Single Supply Operation. The ADG719
offers high performance, including low on resistance and fast
switching times and is fully specified and guaranteed withV and +5 V supply rails.Very Low RON (4 W max at 5 V, 10 W max at 3 V). At 1.8V
operation, RON is typically 40W over the temperature range.On-Resistance Flatness (RFLAT(ON)) (0.75 W typ).–3 dB Bandwidth >200 MHz.Low Power Dissipation. CMOS construction ensures low
power dissipation.Fast tON/tOFF.Tiny 6-lead SOT-23 and 8-lead mSOIC packages.
ADG719–SPECIFICATIONS1ANALOG SWITCH
NOTES
1Temperature ranges are as follows:B Version, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, GND = 0 V. All specifications –408C to +858C, unless otherwise
noted.)
ADG719NOTESTemperature ranges are as follows: B Version, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +3 V 6 10%, GND = 0 V. All specifications –408C to +858C, unless otherwise noted.)SPECIFICATIONS1
ADG719
ORDERING GUIDE*Brand = Due to package size limitations, these three characters represent the part number.
PIN CONFIGURATIONS
Table I.Truth Table
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +7 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°CSOIC Package, Power Dissipation . . . . . . . . . . . . . . .315 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .206°C/WJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .44°C/W
SOT-23 Package, Power Dissipation . . . . . . . . . . . . . .282 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . .229.6°C/WJC Thermal Impedance . . . . . . . . . . . . . . . . . . . .91.99°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1kV
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
6-Lead SOT-23
(RT-6)
8-Lead mSOIC
(RM-8)
TERMINOLOGY
Figure 1.On Resistance as a Function of VD (VS) Single
Supplies
Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
Figure 3.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
Figure 4.Supply Current vs. Input Switching Frequency
Figure 5.Off Isolation vs. Frequency
CROSSTALK – dBFigure 6.Crosstalk vs. Frequency
ADG719
IDSRON = V1/IDSTest Circuit 1.On Resistance
Test CircuitsA
IS (OFF)ID (OFF)Test Circuit 2.Off Leakage
Test Circuit 3.On Leakage
VDD
VOUT
VIN
VOUTtOFFTest Circuit 4.Switching Times
VDD
VS1
VOUT
VS2
VIN
VIN
VOUTTest Circuit 5.Break-Before-Make Time Delay, tD
VOUT
VDD
50VFigure 7.On Response vs. Frequency
