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ADG713BR-REEL7
CMOS Low Voltage 2.5 Ω Quad SPST Switch
REV.A
CMOS
Low Voltage 4 � Quad SPST Switches
FUNCTIONAL BLOCK DIAGRAMS
FEATURES
1.8 V to 5.5 V Single Supply
Low On Resistance (2.5 � Typ)
Low On Resistance Flatness
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
16-Lead TSSOP and SOIC Packages
Fast Switching Times
tON 16 ns
tOFF 10 ns
Typical Power Consumption (< 0.01 �W)
TTL/CMOS Compatible
APPLICATIONS
USB 1.1 Signal Switching Circuits
Cell Phones
PDAs
Battery-Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTIONThe ADG711, ADG712, and ADG713 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation yet gives high switching speed,
low on resistance, low leakage currents, and high bandwidth.
They are designed to operate from a single 1.8 V to 5.5 V supply,
making them ideal for use in battery-powered instruments and
with the new generation of DACs and ADCs from Analog
Devices. Fast switching times and high bandwidth make the
parts suitable for switching USB 1.1 data signals and video
signals.
The ADG711, ADG712, and ADG713 contain four independent
single-pole/single-throw (SPST) switches. The ADG711 and
ADG712 differ only in that the digital control logic is inverted.
The ADG711 switches are turned on with a logic low on the
appropriate control input, while a logic high is required to turn
on the switches of the ADG712. The ADG713 contains two
switches whose digital control logic is similar to the ADG711,
while the logic is inverted on the other two switches.
Each switch conducts equally well in both directions when ON.
The ADG713 exhibits break-before-make switching action.
The ADG711/ADG712/ADG713 are available in 16-lead TSSOP
and 16-lead SOIC packages.
PRODUCT HIGHLIGHTS1.8 V to 5.5 V Single-Supply Operation.
The ADG711, ADG712, and ADG713 offer high perfor-
mance and are fully specified and guaranteed with 3 V and
5 V supply rails.Very Low RON (4.5 W max at 5 V, 8 W max at 3 V). At
supply voltage of 1.8 V, RON is typically 35 W over the
temperature range.Low On Resistance Flatness.–3 dB Bandwidth >200 MHz.Low Power Dissipation.
CMOS construction ensures low power dissipation.Fast tON/tOFF.Break-Before-Make Switching.
This prevents channel shorting when the switches are con-
figured as a multiplexer (ADG713 only).16-Lead TSSOP and 16-Lead SOIC Packages.
ADG711/ADG712/ADG713–SPECIFICATIONS1(VDD = +5 V � 10%, GND = 0 V. All specifications
–40�C to +85�C unless otherwise noted.)LEAKAGE CURRENTS
NOTES
1Temperature range: B Version: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG711/ADG712/ADG713
(VDD = +3 V � 10%, GND = 0 V. All specifications –40�C to +85�C unless otherwise noted.)NOTES
1Temperature range: B Version: –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
SPECIFICATIONS1
ADG711/ADG712/ADG713
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG711/ADG712/ADG713 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . .–0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . .430 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .150°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .27°C/W
ORDERING GUIDE*Z = Pb-free part.
SOIC Package, Power Dissipation . . . . . . . . . . . . . . .520 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . .125°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . .42°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . .215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 kV
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
PIN CONFIGURATION
(TSSOP/SOIC)
Table I.Truth Table (ADG711/ADG712)
Table II.Truth Table (ADG713)
ADG711/ADG712/ADG713
–Typical Performance Characteristics
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
ON 0.5
5.0Figure 1.On Resistance as a Function of VD (VS)
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
6.0
0.51.52.02.5Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
VD OR VS – DRAIN OR SOURCE VOLTAGE (V)
6.00.5
1.01.52.02.53.03.54.04.55.0Figure 3.On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
FREQUENCY (Hz)
10m
10010M1k
SUPPLY
(Amps)
10k100k1M
100�
10�
100n
10nFigure 4.Supply Current vs. Input Switching Frequency
Figure 5.Off Isolation vs. Frequency
Figure 6.Crosstalk vs. Frequency
