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ADG704BRMADN/a650avaiCMOS Low Voltage 4 ohm, 4-Channel Multiplexer


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ADG704BRM
CMOS Low Voltage 4 ohm, 4-Channel Multiplexer
REV.A
CMOS
Low Voltage 4 V, 4-Channel Multiplexer
FUNCTIONAL BLOCK DIAGRAM
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 V (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead mSOIC Package
Fast Switching Times
tON 20 ns
tOFF 13 ns
Typical Power Consumption (<0.01 mW)
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Data Acquisition System
Video Switching
GENERAL DESCRIPTION

The ADG704 is a CMOS analog multiplexer, comprising four
single channels. This multiplexer is designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, low leakage currents
and high bandwidths.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG704 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
The ADG704 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1 and
EN. A Logic “0” on the EN pin disables the device.
Each switch of the ADG704 conducts equally well in both
directions when ON. The ADG704 exhibits break-before-make
switching action.
The ADG704 is available in 10-lead mSOIC package.
PRODUCT HIGHLIGHTS
+1.8 V to +5.5 V Single Supply Operation.
The ADG704 offers high performance and is fully specified
and guaranteed with +3 V and +5 V supply rails.Very Low RON (4.5 W Max at 5 V, 8 W Max at 3 V).
At supply voltage of +1.8 V, RON is typically 35 W over the
temperature range.Low On-Resistance Flatness.–3 dB Bandwidth Greater than 200 MHz.Low Power Dissipation.
CMOS construction ensures low power dissipation.Fast tON/tOFF.Break-Before-Make Switching Action.10-Lead mSOIC Package.
ADG704–SPECIFICATIONS1(VDD = +5 V 6 10%, GND = 0 V. All Specifications –408C to +858C, unless
otherwise noted.)

NOTESTemperature ranges are as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG704
SPECIFICATIONS1

LEAKAGE CURRENTS
NOTESTemperature ranges are as follows: B Version: –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +3 V 6 10%, GND = 0 V. All Specifications –408C to +858C, unless otherwise noted.)
ADG704
CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
TERMINOLOGY

VDDMost positive power supply potential.
GNDGround (0 V) reference.Source terminal. May be an input or output.Drain terminal. May be an input or output.
A0, A1Logic control inputs.Logic control input.
RONOhmic resistance between D and S.RONOn resistance match between any two chan-
nels i.e., RONmax–RONmin.
RFLAT(ON)Flatness is defined as the difference between
the maximum and minimum value of on resis-
tance as measured over the specified analog
signal range.
ID (OFF)Drain leakage current with the switch “OFF.”
IS (OFF)Source leakage current with the switch “OFF.”
ID, IS (ON)Channel leakage current with the switch “ON.”
VD (VS)Analog voltage on terminals D, S.
CS (OFF)“OFF” switch source capacitance.
CD (OFF)“OFF” switch drain capacitance.
CD, CS (ON)“ON” switch capacitance.
tONDelay between applying the digital control
input and the output switching on. See Test
Circuit 4.
tOFFDelay between applying the digital control
input and the output switching off.“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
CrosstalkA measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
Off IsolationA measure of unwanted signal coupling
through an “OFF” switch.
ChargeA measure of the glitch impulse transferred
Injectionfrom the digital input to the analog output
during switching.
BandwidthThe frequency at which the output is attenu-
ated by –3 dBs.
On ResponseThe frequency response of the “ON” switch.
On LossThe voltage drop across the “ON” switch,
seen on the On Response vs. Frequency plot
as how many dBs the signal is away from 0 dB
at very low frequencies.
Table I.Truth Table
ABSOLUTE MAXIMUM RATINGS1

(TA = +25°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . .–0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°CSOIC Package, Power Dissipation . . . . . . . . . . . . . . .315 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .206°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 kV
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE

NOTESBrand = Due to small package size, these three characters represent the part
number.RM = mSOIC.
PIN CONFIGURATION
(10-Lead mSOIC)
GND
VDD
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts

0.50.51.01.52.02.53.03.54.04.55.0

Figure 1.On Resistance as a Function of VD (VS) Single
Supplies
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts

0.51.01.52.02.53.0

Figure 2.On Resistance as a Function of VD (VS) for
Different Temperatures; VDD = 3 V
VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts

0.50.51.01.52.02.53.03.54.04.55.0

Figure 3.On Resistance as a Function of VD (VS) for
Different Temperatures; VDD = 5 V
Figure 4.Supply Current vs. Input Switching Frequency

Figure 5.Off Isolation vs. Frequency
CROSSTALK – dB
FREQUENCY – Hz
10k100k1M10M100M
–130

Figure 6.Crosstalk vs. Frequency
ADG704
FREQUENCY – Hz
10k100k1M10M100M
ON RESPONSE – dB

Figure 7.On Response vs. Frequency
APPLICATIONS
SOURCE VOLTAGE – Volts
INJ
– pC
–10

Figure 8.Charge Injection vs. Source Voltage
A0 A1 EN
250V
VOUT

Figure 9.4-Channel Video Multiplexing
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