ADG662BRU ,LC2MOS Precision 5 V Quad SPST Switchesapplications. Inherent in the design is low chargesignal switching. injection for minimum transient ..
ADG701BRJ-REEL7 ,4 Ohm, Low Voltage, Wide Bandwidth Single SPST in 6-ld SOT-23, NCAPPLICATIONS ADG702 offer high performance, including low on Battery powered systems resistance and ..
ADG701BRM ,CMOS Low Voltage 2ohm SPST SwitchesGENERAL DESCRIPTION PRODUCT HIGHLIGHTSThe ADG701/ADG702 are monolithic CMOS SPST switches. 1. +1.8 ..
ADG701BRM-REEL ,4 Ohm, Low Voltage, Wide Bandwidth Single SPST in 6-ld SOT-23, NCSPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V. Temperature range for B version is −40°C to +85°C, unles ..
ADG701BRT-REEL ,4 Ohm, Low Voltage, Wide Bandwidth Single SPST in 6-ld SOT-23, NCGENERAL DESCRIPTION 4. −3 dB bandwidth > 200 MHz. The ADG701/ADG702 are monolithic CMOS SPST switch ..
ADG701BRT-REEL7 , CMOS Low Voltage 2 Ω SPST Switches
AFCT-5805AZ , 155 Mb/s Single Mode Fiber Optic Transceiver for ATM, SONET OC-3/SDH STM-1
AFCT-5805AZ , 155 Mb/s Single Mode Fiber Optic Transceiver for ATM, SONET OC-3/SDH STM-1
AFCT-5805DZ , 155 Mb/s Single Mode Fiber Optic Transceiver for ATM, SONET OC-3/SDH STM-1
AFCT-5944LZ , Single Mode SFF Transceivers for SONET OC-48/SDH STM-16 Multirate Operation
AFE0064IPBK ,64 Channel Analog Front End for Digital X-Ray Detector 128-LQFP -40 to 85maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functio ..
AFE1124E ,Brown Corporation - HDSL/MDSL ANALOG FRONT END
ADG661BRU-ADG662BRU
LC2MOS Precision 5 V Quad SPST Switches
REV.0
2MOS
Precision 5 V Quad SPST Switches
FUNCTIONAL BLOCK DIAGRAMFEATURES
+5 V, 65 V Power Supplies
Ultralow Power Dissipation (<0.5 mW)
Low Leakage (<100 pA)
Low On Resistance (<50 V)
Fast Switching Times
Low Charge Injection
TTL/CMOS Compatible
TSSOP Package
APPLICATIONS
Battery Powered Instruments
Single Supply Systems
Remote Powered Equipment
+5 V Supply Systems
Computer Peripherals such as Disk Drives
Precision Instrumentation
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Sample Hold Systems
Communication SystemsEach switch conducts equally well in both directions when ON
and has an input signal range that extends to the supplies. In the
OFF condition, signal levels up to the supplies are blocked. All
switches exhibit break-before-make switching action for use in
multiplexer applications. Inherent in the design is low charge
injection for minimum transients when switching the digital
inputs.
PRODUCT HIGHLIGHTS+5 V Single Supply Operation
The ADG661, ADG662 and ADG663 offer high perfor-
mance, including low on resistance and wide signal range,
fully specified and guaranteed with ±5 V and +5 V supply
rails.Ultralow Power Dissipation
CMOS construction ensures ultralow power dissipation.Low RONBreak-Before-Make Switching
This prevents channel shorting when the switches are config-
ured as a multiplexer.
GENERAL DESCRIPTIONThe ADG661, ADG662 and ADG663 are monolithic CMOS
devices comprising four independently selectable switches.
These switches feature low, well-controlled on resistance and
wide analog signal range, making them ideal for precision analog
signal switching.
They are fabricated using Analog Devices' advanced linear
compatible CMOS (LC2MOS) process, which offers benefits of
low leakage currents, ultralow power dissipation and low capaci-
tance for fast switching speeds with minimum charge injection.
The on resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion when
switching audio signals. Fast switching speed coupled with high
signal bandwidth also make the parts suitable for video signal
switching. CMOS construction ensures ultralow power dissipa-
tion making the parts ideally suited for portable and battery
powered instruments.
The ADG661, ADG662 and ADG663 contain four indepen-
dent SPST switches. The ADG661 and ADG662 differ only in
that the digital control logic is inverted. The ADG661 switches
are turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG662. The ADG663
has two switches with digital control logic similar to that of the
ADG661, while the logic is inverted on the other two switches.
ADG661/ADG662/ADG663–SPECIFICATIONS1
Dual SupplyNOTES
1Temperature ranges are as follows:B Versions, –40°C to +85°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, VSS = –5 V 6 10%, GND = 0 V, unless otherwise noted)
ADG661/ADG662/ADG663
Single SupplyNOTESTemperature ranges are as follows:B Versions, –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG661/ADG662/ADG663
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG661/ADG662/ADG663 features proprietary ESD protection circuitry, per-
manent damage may occur on devices subjected to high energy electrostatic discharges. There-
fore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
ORDERING GUIDE
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
Analog, Digital Inputs2 . . . . . . . . . . .VSS –2 V to VDD +2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
TSSOP Package, Power Dissipation . . . . . . . . . . . . . .450 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . .115°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . .35°C/W
Lead Temperature, Soldering
Vapor Phase (60 secs) . . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 secs) . . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
PIN CONFIGURATION
Table I.Truth Table (ADG661/ADG662)
Table II.Truth Table (ADG663)
NC = NO CONNECT
ADG661/ADG662/ADG663
Typical Performance Characteristics
VD OR VS – DRAIN OR SOURCE VOLTAGE – V5–434210–1–2–3
– Figure 1.On Resistance as a
Function of VD (VS) Dual Supplies
10nA
100nA
1mA
10mA
100mA
100k10M1001k10k1M
FREQUENCY – Hz
1mA
10mA
SUPPLYFigure 4.Supply Current vs. Input
Switching Frequency
VD OR VS – DRAIN OR SOURCE VOLTAGE
LEAKAGE CURRENT – nA Figure 7.Leakage Currents as a
Function of VD (VS)
VD OR VS – DRAIN OR SOURCE VOLTAGE – V5–434210–1–2–3
+858C
+258C
– Figure 2.On Resistance as a
Function of VD (VS) for
Different Temperatures
TEMPERATURE – 8C
LEAKAGE CURRENT – nA Figure 5.Leakage Currents as a
Function of Temperature
FREQUENCY – Hz
10010010M1k10k100k1M
CROSSTALK – dBFigure 8.Crosstalk vs. Frequency
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
– 5234Figure 3.On Resistance as a
Function of VD (VS) Single Supply
FREQUENCY – Hz
10010M1k10k100k1M
OFF ISOLATION – dB Figure 6.Off Isolation vs.
Frequency
