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ADG619BRM-ADG619BRT-ADG619BRT.-ADG620BRM
CMOS +-5 V/ +5V 4 OHM SINGLE SPDT SWITCHES
REV.0
CMOS �5 V/+5 V
4 � Single SPDT Switches
FUNCTIONAL BLOCK DIAGRAM
FEATURES
6 � (Max) On Resistance
0.8 � (Max) On-Resistance Flatness
2.7 V to 5.5 V Single Supply�2.7 V to �5.5 V Dual Supply
Rail-to-Rail Operation
8-Lead SOT-23 Package, 8-Lead Micro-SOIC Package
Typical Power Consumption (<0.1 �W)
TTL/CMOS Compatible Inputs
APPLICATIONS
Automatic Test Equipment
Power Routing
Communication Systems
Data Acquisition Systems
Sample and Hold Systems
Avionics
Relay Replacement
Battery-Powered Systems
GENERAL DESCRIPTIONThe ADG619 and the ADG620 are monolithic, CMOS SPDT
(single pole, double throw) switches. Each switch conducts
equally well in both directions when on.
The ADG619/ADG620 offers low On-Resistance of 4 Ω, which
is matched to within 0.7 Ω between channels. These switches also
provide low power dissipation yet give high switching speeds.The
ADG619 exhibits break-before-make switching action, thus
preventing momentary shorting when switching channels. The
ADG620 exhibits make-before-break action.
The ADG619/ADG620 are available in 8-lead SOT-23 pack-
ages and 8-lead Micro-SOIC packages.
PRODUCT HIGHLIGHTSLow On Resistance (RON) (4 Ω typ) Dual ±2.7V to ±5.5V or Single 2.7V to 5.5VLow Power Dissipation. CMOS construction ensures low
power dissipation.Fast tON/tOFFTiny 8-Lead SOT-23 Package and 8-Lead Micro-SOIC Package
Table I.Truth Table for the ADG619/ADG620
ADG619/ADG620–SPECIFICATIONSANALOG SWITCH
LEAKAGE CURRENTS
DUAL SUPPLY1(VDD = +5 V � 10%, VSS = –5 V � 10%, GND = 0 V. All specifications –40�C to +85�C unless otherwise noted.)
ADG619/ADG620
SINGLE SUPPLY1(VDD = +5 V � 10%, VSS = 0 V, GND = 0 V. All specifications –40�C to +85�C unless otherwise noted.)ANALOG SWITCH
NOTESTemperature ranges are as follows: B Version, –40°C to +85°C.
ADG619/ADG620
ABSOLUTE MAXIMUM RATINGS1(TA = 25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6.5 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –6.5 V
Analog Inputs2 . . . . . . . . . . . . . . . . VSS –0.3 V to VDD +0.3 V
Digital Inputs2 . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 50 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Micro-SOIC Package
�JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . 206°C/W
�JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 44°C/W
SOT-23 Package
�JA Thermal Impedance . . . . . . . . . . . . . . . . . . 229.6°C/W
�JC Thermal Impedance . . . . . . . . . . . . . . . . . . 91.99°C/W
Lead Temperature, Soldering (10 seconds) . . . . . . . . . 300°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . 220°C
NOTESStresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDEADG619BRT
ADG620BRM
*Branding on SOT-23 and Micro-SOIC packages is limited to three characters due to space constraints.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG619/ADG620 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
PIN CONFIGURATIONS
8-Lead SOT-23
(RT-8)
8-Lead Micro-SOIC
(RM-8)
TERMINOLOGYVINL
TPC 1.On Resistance vs. VD (VS) –
Dual Supply
Typical Performance CharacteristicsTPC 2.On Resistance vs. VD (VS) –
Single Supply
TPC 3.On Resistance vs. VD (VS) for
Different Temperatures – Dual Supply
ADG619/ADG620–Typical Performance CharacteristicsTPC 4.On Resistance vs. VD (VS) for
Different Temperatures – Single Supply
TPC 7.Charge Injection vs. Source
Voltage
TPC 10.Crosstalk vs. Frequency
TPC 5.Leakage Currents vs.
Temperature – Dual Supply
TPC 8.tON/tOFF Times vs. Temperature
TPC 11.On Response vs. Frequency
TPC 6.Leakage Currents vs.
Temperature – Single Supply
TPC 9.Off Isolation vs. Frequency
