ADG513BR ,LC2MOS Precision 5 V/3 V Quad SPST SwitchesCHARACTERISTICSt 250 250 ns typ R = 300 W , C = 35 pF;ON L L500 500 ns max V = +2 V; Test Circuit 4 ..
ADG513BR ,LC2MOS Precision 5 V/3 V Quad SPST SwitchesSPECIFICATIONSDual Supply (V = +5 V 6 10%, V = –5 V 6 10%, GND = 0 V, unless otherwise noted)DD SSB ..
ADG526ABQ ,CMOS LATCHED 8/16 CHANNEL ANALOG MULTIPLEXERSANALOG
CMOS
DEVICES Latched 8/ 16 Channel Analog Multiplexers
AM52M/li0tyifl7h
ADG526AKN ,CMOS LATCHED 8/16 CHANNEL ANALOG MULTIPLEXERSSpecifications subicct to change without notice.
-2- REV. ASingle Supply (h, = +10.av to +1s.5v, ..
ADG526AKP ,CMOS LATCHED 8/16 CHANNEL ANALOG MULTIPLEXERSSpecifications
Wide Supply Ranges (10.8V to 16.5V)
Microprocessor Compatible (100ns WE Pulse)
Ex ..
ADG526AKPZ , CMOS Latched 8-/16-Channel Analog Multiplexers
AF9410N , N-Channel 30-V (D-S) MOSFET
AF9435P , P-Channel 30-V (D-S) MOSFET
AF9435P , P-Channel 30-V (D-S) MOSFET
AFBR-1529Z , DC to 10 Mbd Versatile Link Fiber Optic Analog Transmitter for 1 mm POF and 200 μm PCS
AFBR-1629Z , DC, 50 Megabaud Versatile Link Fiber Optic Transmitter and Receiver for 1 mm POF
AFBR-2419TZ , 50 MBd Miniature Link Fiber Optic Receiver
ADG511ABR-ADG511BN-ADG511BR-ADG512BN-ADG512BR-ADG512TQ-ADG513BR
LC2MOS Precision 5 V/3 V Quad SPST Switches
FUNCTIONAL BLOCK DIAGRAMSREV.B
LC2MOS
Precision 5 V/3 V Quad SPST Switches
FEATURES
+3 V, +5 V or 65 V Power Supplies
Ultralow Power Dissipation (<0.5 mW)
Low Leakage (<100 pA)
Low On Resistance (<50 V)
Fast Switching Times
Low Charge Injection
TTL/CMOS Compatible
16-Lead DIP or SOIC Package
APPLICATIONS
Battery Powered Instruments
Single Supply Systems
Remote Powered Equipment
+5 V Supply Systems
Computer Peripherals such as Disk Drives
Precision Instrumentation
Audio and Video Switching
Automatic Test Equipment
Precision Data Acquisition
Sample Hold Systems
Communication Systems
Compatible with 65 V Supply DACs and ADCs such as
AD7840/8, AD7870/1/2/4/5/6/8
GENERAL DESCRIPTIONThe ADG511, ADG512 and ADG513 are monolithic CMOS
ICs containing four independently selectable analog switches.
These switches feature low, well-controlled on resistance and
wide analog signal range, making them ideal for precision
analog signal switching.
These switch arrays are fabricated using Analog Devices’
advanced linear compatible CMOS (LC2MOS) process which
offers the additional benefits of low leakage currents, ultralow
power dissipation and low capacitance for fast switching speeds
with minimum charge injection. These features make the
ADG511, ADG512 and ADG513 the optimum choice for a
wide variety of signal switching tasks in precision analog signal
processing and data acquisition systems.
The ability to operate from single +3 V, +5 V or –5 V bipolar
supplies make the ADG511, ADG512 and ADG513 perfect for
use in battery-operated instruments, 4–20 mA loop systems and
with the new generation of DACs and ADCs from Analog
Devices. The use of 5 V supplies and reduced operating currents
give much lower power dissipation than devices operating from15 V supplies.
The ADG511, ADG512 and ADG513 contain four indepen-
dent SPST switches. The ADG511 and ADG512 differ only in
that the digital control logic is inverted. The ADG511 switch is
turned on with a logic low on the appropriate control input,
while a logic high is required for the ADG512. The ADG513
contains two switches whose digital control logic is similar to
that of the ADG511 while the logic is inverted in the remaining
two switches.
PRODUCT HIGHLIGHTS+5 Volt Single Supply Operation
The ADG511/ADG512/ADG513 offers high performance,
including low on resistance and wide signal range, fully
specified and guaranteed with +3 V, –5 V as well as +5 V
supply rails.Ultralow Power Dissipation
CMOS construction ensures ultralow power dissipation.Low RONBreak-Before-Make Switching
Switches are guaranteed to have break-before-make opera-
tion. This allows multiple outputs to be tied together for
multiplexer applications without the possibility of momentary
shorting between channels.
Dual SupplyDIGITAL INPUTS
DYNAMIC CHARACTERISTICS
NOTESTemperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, VSS = –5 V 6 10%, GND = 0 V, unless otherwise noted)ADG511/ADG512/ADG513–SPECIFICATIONS1
Single SupplyNOTESTemperature ranges are as follows: B Versions –40°C to +85°C; T Versions –55°C to +125°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +5 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
ADG511/ADG512/ADG513
Single SupplyANALOG SWITCH
LEAKAGE CURRENTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTESTemperature ranges are as follows: B Versions –40°C to +85°C.Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
ADG511/ADG512/ADG513–SPECIFICATIONS1
(VDD = +3.3 V 6 10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS1(TA = +25°C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+44 V
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . .–0.3 V to +25 V
VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . .+0.3 V to –25 V
Analog, Digital Inputs2 . . . . . . . . . . .VSS –2 V to VDD + 2 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . .30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . .–40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . .–55°C to +125°C
Storage Temperature Range . . . . . . . . . . . . .–65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Cerdip Package, Power Dissipation . . . . . . . . . . . . . . .900 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . .76°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . .+300°C
Plastic Package, Power Dissipation . . . . . . . . . . . . . . .470 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . .117°C/W
Lead Temperature, Soldering (10 sec) . . . . . . . . . . .+260°C
SOIC Package, Power Dissipation . . . . . . . . . . . . . . . .600 mWJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . .77°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . .+215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . .+220°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG511/ADG512/ADG513 features proprietary ESD protection circuitry,
permanent damage may occur on devices subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid performance degradation or loss
of functionality.
ORDERING GUIDENOTESFor availability of MIL-STD-883, Class B processed parts, contact factory.3.3 V specifications apply over 0°C to +70°C temperature range.N = Plastic DIP; R = 0.15" Small Outline IC (SOIC); Q = Cerdip.Trench isolated latch-up proof parts. See Trench Isolation section.
ADG511/ADG512/ADG513
PIN CONFIGURATION
(DIP/SOIC)
NC = NO CONNECT
Truth Table (ADG511/ADG512)
Truth Table (ADG513)
TERMINOLOGY
